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KSA1220A-O

Onsemi

KSA1220A-O by Onsemi

KSA1220A-O by Onsemi is a PNP BJT transistor with max VCEsat of 0.7V, hFE of 100, and IC of 1.2A. Ideal for amplifier applications due to its high transition frequency of 175MHz and max power dissipation of 20W in a flange mount package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,563 parts In-Stock

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Digiode

USA . 1,897 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,719 parts In-Stock

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SupplyDigital Components

Austria . 5,563 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,479 parts In-Stock

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TANS Electronics

Latvia . 4,423 parts In-Stock

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Kulean Microsystems

USA . 3,296 parts In-Stock

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Supply Digital

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Problanco Electronics

Mexico . 885 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 496 parts In-Stock

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Corohmni

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Overview

Enhance your amplifier designs with the KSA1220A-O power BJT from Onsemi. This PNP transistor offers superior quality and reliability, thanks to Onsemi's reputation for producing high-performance components. Ideal for a wide range of amplifier applications, this transistor provides a maximum VCEsat of 0.7V and a minimum DC current gain of 100. With a maximum operating temperature of 150 °C and a maximum collector-emitter voltage of 160V, the KSA1220A-O delivers exceptional performance and efficiency. Upgrade your projects with this top-of-the-line component today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, making it suitable for various applications.

Polarity or Channel Type: PNP

Allows for easy integration into PNP circuit configurations.

Configuration: SINGLE

Simplified design and easy to use in single transistor circuits.

Transistor Application: AMPLIFIER

Specifically designed for use in amplifier circuits, providing high performance.

Maximum VCEsat: 0.7 V

Low VCEsat reduces power losses and improves efficiency.

Package Shape: RECTANGULAR

Compact design for space-efficient installations.

Terminal Form: THROUGH-HOLE

Easy to solder and secure in place for reliable connections.

No. of Terminals: 3

Simple and straightforward connections for circuit integration.

Maximum Power Dissipation (Abs): 20 W

Can handle high power without overheating, ensuring reliability.

Package Style (Meter): FLANGE MOUNT

Allows for easy mounting and securing in place.

Maximum Power Dissipation Ambient: 1.2 W

Maintains stable performance even in varying ambient temperatures.

Minimum DC Current Gain (hFE): 100

Provides high current gain for efficient amplification.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 160 V

Supports high voltage applications without breakdown.

Transistor Element Material: SILICON

Silicon material offers good performance and reliability for the transistor element.

Maximum Collector Current (IC): 1.2 A

Allows for high current handling capability for various applications.

Terminal Position: SINGLE

Simplifies connections and integration into circuits.

Nominal Transition Frequency (fT): 175 MHz

High transition frequency for fast switching and high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSA1220A-O attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

160 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1.2 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.7 V

Trade Compliance

KSA1220A-O Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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