Loading...

KSA1220A-R

Onsemi

KSA1220A-R by Onsemi

The Onsemi KSA1220A-R is a PNP BJT transistor with max VCEsat of 0.7V, IC of 1.2A, and hFE of 60. Ideal for amplifier applications, it has a max power dissipation of 20W and operates up to 150 °C. With a fT of 175MHz, this transistor is in a rectangular package with through-hole terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,205 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,205

-

-

-

-

Vyrian

USA . 446 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

446

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kulean Microsystems

USA . 4,666 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,666

-

-

-

-

SupplyDigital Components

Austria . 4,459 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,459

-

-

-

-

Corphita

USA . 2,866 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,866

-

-

-

-

Supply Digital

USA . 2,232 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,232

-

-

-

-

Problanco Electronics

Mexico . 1,770 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,770

-

-

-

-

TANS Electronics

Latvia . 1,729 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,729

-

-

-

-

UHIMA Technologies

Türkiye . 810 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

810

-

-

-

-

Corohmni

South Africa . 172 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

172

-

-

-

-

Overview

Enhance your amplifier performance with the KSA1220A-R by Onsemi. Crafted with precision and expertise, this power bipolar junction transistor offers unparalleled quality and reliability. Ideal for a wide range of applications, this PNP transistor delivers exceptional power dissipation and efficiency. Trust Onsemi's reputation for excellence and elevate your projects with the KSA1220A-R. Unlock the full potential of your amplifiers and experience the difference that superior technology can make. Choose Onsemi for unmatched value and innovation in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for various electronic applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into PNP circuit designs, providing flexibility in amplifier applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and ensures straightforward installation and operation.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification tasks.

Maximum VCEsat: 0.7 V

The low VCEsat of 0.7V minimizes power loss and enhances efficiency in amplifier circuits.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy PCB mounting and efficient use of space in electronic designs.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides secure and stable connections, ideal for applications where reliability is crucial.

No. of Terminals: 3

With 3 terminals, the transistor offers essential connections for proper functionality in amplifier circuits.

Maximum Power Dissipation (Abs): 20 W

The high maximum power dissipation of 20W enables the transistor to handle high-power amplification tasks effectively.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for secure mounting and heat dissipation, ensuring reliability in various applications.

Maximum Power Dissipation Ambient: 1.2 W

The low ambient power dissipation of 1.2W indicates efficient heat dissipation and reliable performance in varying environmental conditions.

Minimum DC Current Gain (hFE): 60

The minimum DC current gain of 60 ensures stable and consistent amplification in the transistor's operation.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, the transistor can withstand high-temperature environments without compromising performance.

Maximum Collector-Emitter Voltage: 160 V

The high maximum collector-emitter voltage rating of 160V allows for reliable operation in a wide range of applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures stability, reliability, and consistent performance in various operating conditions.

Maximum Collector Current (IC): 1.2 A

With a maximum collector current of 1.2A, the transistor can handle high current loads in amplifier circuits without overheating.

Terminal Position: SINGLE

The single terminal position simplifies installation and connection, ensuring ease of use in amplifier circuit designs.

Nominal Transition Frequency (fT): 175 MHz

The high nominal transition frequency of 175MHz indicates the transistor's ability to amplify signals at high frequencies, making it suitable for various applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSA1220A-R attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

160 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1.2 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.7 V

Trade Compliance

KSA1220A-R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20