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KSA1220A

Onsemi

KSA1220A by Onsemi

The Onsemi KSA1220A is a PNP BJT transistor with max VCEsat of 0.7V, hFE of 60, and IC of 1.2A. Ideal for amplifier applications due to its high transition frequency of 175MHz and max power dissipation of 20W in a rectangular package style.

Median Price

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Lifecycle Status

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3

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1k+

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Vyrian

USA . 7,642 parts In-Stock

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Digiode

USA . 2,170 parts In-Stock

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TANS Electronics

Latvia . 6,649 parts In-Stock

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Problanco Electronics

Mexico . 4,970 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,881 parts In-Stock

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SupplyDigital Components

Austria . 4,192 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,254 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Corphita

USA . 1,327 parts In-Stock

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Kulean Microsystems

USA . 485 parts In-Stock

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UHIMA Technologies

Türkiye . 432 parts In-Stock

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Corohmni

South Africa . 255 parts In-Stock

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Overview

Enhance your amplifier circuits with the KSA1220A from Onsemi! Crafted with precision and reliability, Onsemi's Power Bipolar Junction Transistor (BJT) offers top-notch performance for a variety of applications. Whether you're looking to boost your audio systems or enhance signal processing, this PNP transistor delivers exceptional quality and efficiency. With a maximum VCEsat of 0.7V and a minimum DC Current Gain of 60, the KSA1220A is designed to meet your power needs while maintaining optimum performance. Trust in Onsemi's reputation for excellence and elevate your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor components inside, ensuring durability and longevity.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Maximum VCEsat: 0.7 V

Low VCEsat value indicates minimal saturation voltage, leading to efficient operation with minimal power loss.

Maximum Power Dissipation (Abs): 20 W

With a high maximum power dissipation, this transistor can handle significant power loads without overheating.

Maximum Collector-Emitter Voltage: 160 V

The high collector-emitter voltage rating allows this transistor to be used in applications requiring higher voltage capabilities.

Minimum DC Current Gain (hFE): 60

A high DC current gain ensures that the transistor can provide amplification with minimal input current.

Nominal Transition Frequency (fT): 175 MHz

The high transition frequency indicates that this transistor is capable of operating at higher frequencies, suitable for various applications including signal processing and RF circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSA1220A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

160 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1.2 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.7 V

Trade Compliance

KSA1220A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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