Loading...

KSA1010R

Onsemi

KSA1010R by Onsemi

KSA1010R by Onsemi is a PNP BJT transistor for switching applications. It has a VCEsat of 0.6V, IC of 7A, and hFE of 40. With a max power dissipation of 40W, it operates at temperatures up to 150 °C. Ideal for high-power switching circuits in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,221 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,221

-

-

-

-

Digiode

USA . 609 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

609

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TANS Electronics

Latvia . 7,346 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,346

-

-

-

-

Problanco Electronics

Mexico . 6,659 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,659

-

-

-

-

SupplyDigital Components

Austria . 3,444 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,444

-

-

-

-

Supply Digital

USA . 2,537 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,537

-

-

-

-

Corphita

USA . 936 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

936

-

-

-

-

UHIMA Technologies

Türkiye . 648 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

648

-

-

-

-

Corohmni

South Africa . 468 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

468

-

-

-

-

Kulean Microsystems

USA . 353 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

353

-

-

-

-

Overview

Unlock the power of reliable performance with the KSA1010R from Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors like the KSA1010R for a wide range of applications such as switching. With a maximum Collector-Emitter Voltage of 100V and a Maximum Collector Current of 7A, this PNP transistor offers exceptional value and benefits to customers looking for efficient and effective solutions. Trust Onsemi for cutting-edge technology and unparalleled performance in every product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection for the transistor, making it suitable for various environmental conditions.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications and can handle high current and power, making them ideal for power applications.

Configuration: SINGLE

The single configuration simplifies the design and integration of the transistor in circuits, making it easier to use and maintain.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can quickly turn on and off, making it suitable for applications requiring rapid switching.

Maximum VCEsat: 0.6 V

The low VCEsat value indicates minimal voltage drop across the collector-emitter junction, resulting in higher efficiency and reduced power dissipation.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and placement in circuit boards, enhancing the overall compactness of the design.

Terminal Form: THROUGH-HOLE

The through-hole terminal form makes it easy to solder and secure the transistor in place, ensuring reliable connections in the circuit.

No. of Terminals: 3

The 3-terminal design simplifies the connection process and reduces the chance of wiring errors, making it user-friendly for circuit designers.

Maximum Power Dissipation (Abs): 40 W

With a high maximum power dissipation rating, this transistor can handle large power loads without overheating, ensuring reliable operation.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides a secure and stable mounting option, making it suitable for applications where mechanical stability is crucial.

Maximum Power Dissipation Ambient: 1.5 W

The low maximum power dissipation in ambient conditions indicates good thermal performance and ensures the transistor operates efficiently under varying temperatures.

Minimum DC Current Gain (hFE): 40

The high minimum DC current gain value ensures stable and consistent amplification of current, making it suitable for applications requiring precise control.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without sacrificing performance, ideal for demanding environments.

Maximum Collector-Emitter Voltage: 100 V

The high maximum collector-emitter voltage rating allows the transistor to handle high voltage levels, making it suitable for power applications.

Transistor Element Material: SILICON

Silicon-based transistors offer excellent performance and reliability, ensuring long-term operation in various electronic devices and systems.

Maximum Turn On Time (ton): 500 ns

The fast turn-on time of the transistor allows for quick response in switching operations, reducing delays and improving overall system efficiency.

Maximum Collector Current (IC): 7 A

With a high maximum collector current rating, this transistor can handle large current flows, making it suitable for high-power applications.

Maximum Turn Off Time (toff): 2000 ns

The maximum turn-off time indicates the speed at which the transistor can turn off, ensuring efficient switching and minimal power loss during operation.

Terminal Position: SINGLE

The single terminal position simplifies the layout and connection of the transistor in circuits, reducing installation errors and improving overall system reliability.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSA1010R attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

7 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

40

Maximum Fall Time (tf):

500 ns

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1.5 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

2000 ns

Maximum Turn On Time (ton):

500 ns

Maximum VCEsat:

.6 V

Trade Compliance

KSA1010R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20