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KSA1220

Onsemi

KSA1220 by Onsemi

The Onsemi KSA1220 is a PNP BJT transistor with max VCEsat of 0.7V, hFE of 60, and IC of 1.2A. Ideal for amplifier applications due to its high power dissipation (20W) and max collector-emitter voltage of 120V. Its package style is flange mount with a rectangular shape and through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,433 parts In-Stock

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Digiode

USA . 660 parts In-Stock

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660

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Kulean Microsystems

USA . 8,169 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Supply Digital

USA . 2,654 parts In-Stock

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Corphita

USA . 2,572 parts In-Stock

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SupplyDigital Components

Austria . 2,497 parts In-Stock

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TANS Electronics

Latvia . 1,023 parts In-Stock

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Problanco Electronics

Mexico . 659 parts In-Stock

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Corohmni

South Africa . 198 parts In-Stock

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UHIMA Technologies

Türkiye . 40 parts In-Stock

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Overview

Enhance your electronic projects with the KSA1220 from Onsemi, a high-quality Power BJT transistor that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this PNP transistor is perfect for amplifier applications. With a low VCEsat of 0.7V and a maximum power dissipation of 20W, this transistor delivers exceptional value and efficiency. Whether you're a hobbyist or a professional, the KSA1220 will take your projects to the next level. Upgrade today and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

A single configuration simplifies circuit design and integration, making this transistor easy to use and implement.

Maximum VCEsat: 0.7 V

Low saturation voltage helps in minimizing power loss and improving efficiency in amplification circuits.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and placement in various electronic devices or circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during circuit assembly.

Maximum Power Dissipation (Abs): 20 W

High maximum power dissipation rating allows for handling high power levels without overheating or damage.

Maximum Power Dissipation Ambient: 1.2 W

Good ambient power dissipation rating ensures stable operation in different environmental conditions.

Minimum DC Current Gain (hFE): 60

High DC current gain ensures consistent amplification performance in various circuit configurations.

Maximum Operating Temperature: 150 °C

Wide operating temperature range makes this transistor suitable for different environments and applications.

Maximum Collector-Emitter Voltage: 120 V

High maximum voltage rating allows for handling higher voltage levels in the amplification circuit.

Transistor Element Material: SILICON

Silicon-based transistors offer good performance, reliability, and efficiency in electronic circuits.

Maximum Collector Current (IC): 1.2 A

High collector current rating allows for handling higher current levels in the circuit without saturation or damage.

Terminal Position: SINGLE

Single terminal position simplifies circuit layout and connections, making for easy integration in amplifier circuits.

Nominal Transition Frequency (fT): 175 MHz

High transition frequency allows for higher frequency amplification and signal processing in electronic circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSA1220 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

120 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1.2 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.7 V

Trade Compliance

KSA1220 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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