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KSA1220AYS

Onsemi

KSA1220AYS by Onsemi

KSA1220AYS by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 160V and a max collector current of 1.2A. It is commonly used as an amplifier in various applications due to its high DC current gain (hFE) of 160 and nominal transition frequency (fT) of 175MHz.

Median Price

$0.590

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 2,787 parts In-Stock

1+ parts

$0.428

100+ parts

$0.219

1k+ parts

$0.169

10k+ parts

$0.144

2,787

$0.428

$0.219

$0.169

$0.144

Element14

Singapore . 2,788 parts In-Stock

1+ parts

$0.846

100+ parts

$0.434

1k+ parts

$0.336

10k+ parts

$0.286

2,788

$0.846

$0.434

$0.336

$0.286

DigiKey

USA . 11,841 parts In-Stock

1+ parts

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$0.590

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11,841

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$0.590

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Flip Electronics (Authorized)

USA . 11,841 parts In-Stock

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11,841

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DigiKey Marketplace

USA . 29,978 parts In-Stock

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$0.590

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29,978

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$0.590

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Chip Stock

USA . 14,820 parts In-Stock

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14,820

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Vyrian

USA . 11,746 parts In-Stock

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Flip Electronics

USA . 6,527 parts In-Stock

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6,527

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Digiode

USA . 1,874 parts In-Stock

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1,874

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Nova Conductors

Japan . 450 parts In-Stock

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450

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Distributors (Availability)

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Continental Prestige Electronics

USA . 2,787 parts In-Stock

1+ parts

$0.428

100+ parts

$0.219

1k+ parts

$0.169

10k+ parts

-

2,787

$0.428

$0.219

$0.169

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Ampacity Inc.

Singapore . 11,365 parts In-Stock

1+ parts

$0.500

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11,365

$0.500

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Corohmni

South Africa . 135 parts In-Stock

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$0.590

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135

$0.590

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Modulus Dynamics

Lithuania . 8,293 parts In-Stock

1+ parts

$1.817

100+ parts

$1.817

1k+ parts

$1.817

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8,293

$1.817

$1.817

$1.817

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Aztec Data Supply Inc.

USA . 1,544 parts In-Stock

1+ parts

$1.880

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1,544

$1.880

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Andel Nordic

Denmark . 1,417 parts In-Stock

1+ parts

$5.181

100+ parts

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$4.973

10k+ parts

$4.973

1,417

$5.181

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$4.973

$4.973

Component Stockers USA

USA . 269 parts In-Stock

1+ parts

$99.990

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269

$99.990

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GreenTree Electronics

Israel . 70,000 parts In-Stock

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Perfect Parts

USA . 35,454 parts In-Stock

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Problanco Electronics

Mexico . 7,109 parts In-Stock

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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Lixinc

USA . 4,042 parts In-Stock

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Kepictronics

USA . 4,000 parts In-Stock

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Corphita

USA . 2,753 parts In-Stock

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Argo Parts USA

USA . 2,616 parts In-Stock

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Supply Digital

USA . 1,497 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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SupplyDigital Components

Austria . 952 parts In-Stock

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952

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Kulean Microsystems

USA . 528 parts In-Stock

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528

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UHIMA Technologies

Türkiye . 292 parts In-Stock

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292

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TANS Electronics

Latvia . 238 parts In-Stock

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Overview

Discover the power of Onsemi's KSA1220AYS! As a trusted manufacturer in the industry, Onsemi brings you top-quality Power Bipolar Junction Transistors (BJT) like no other. With its PNP configuration and amplifier application, this transistor offers unbeatable value and benefits. Its plastic/epoxy body material and through-hole terminal form make it easy to use and install. Whether you're an audio enthusiast or a professional in need of reliable amplification, the KSA1220AYS is the perfect choice. Trust Onsemi for exceptional performance and unmatched quality in every product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offering versatility in circuit design.

Configuration: SINGLE

Simplified circuit design and ease of implementation in various amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and efficiency.

Maximum Power Dissipation (Abs): 20 W

Ability to handle higher power levels without overheating, making it suitable for high-demand applications.

Terminal Form: THROUGH-HOLE

Facilitates easy installation and soldering onto circuit boards, enhancing user-friendliness.

Maximum Collector-Emitter Voltage: 160 V

Can withstand higher voltages, providing a wide range of voltage compatibility in different circuits.

Nominal Transition Frequency (fT): 175 MHz

High transition frequency allows for fast switching speeds, ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSA1220AYS attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

160 V

Configuration:

Minimum DC Current Gain (hFE):

160

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSA1220AYS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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