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KSA1010O

Onsemi

KSA1010O by Onsemi

KSA1010O by Onsemi is a PNP BJT transistor for switching applications. It has a VCEsat of 0.6V, IC of 7A, and hFE of 60. With a max power dissipation of 40W, it operates at temperatures up to 150 °C. Ideal for high-power switching circuits in various electronic devices.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 1,884 parts In-Stock

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Vyrian

USA . 1,348 parts In-Stock

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TANS Electronics

Latvia . 8,035 parts In-Stock

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Problanco Electronics

Mexico . 5,979 parts In-Stock

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Kulean Microsystems

USA . 4,428 parts In-Stock

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Corphita

USA . 2,989 parts In-Stock

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SupplyDigital Components

Austria . 1,561 parts In-Stock

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Supply Digital

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UHIMA Technologies

Türkiye . 848 parts In-Stock

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Corohmni

South Africa . 174 parts In-Stock

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Overview

Experience the power of reliable performance with the KSA1010O by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and innovative technology in their Power Bipolar Junction Transistors. This PNP transistor is perfect for switching applications, offering a maximum VCEsat of 0.6V and a maximum collector current of 7A. With a package style of flange mount and a maximum power dissipation of 40W, this transistor provides exceptional value and efficiency. Trust Onsemi to provide you with the best in power transistors for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the transistor suitable for various environments and applications.

Polarity or Channel Type: PNP

Suitable for applications where the current flows from the emitter to the collector, allowing for efficient switching operations.

Maximum VCEsat: 0.6 V

Low saturation voltage helps in reducing power loss and improving efficiency during switching operations.

Maximum Power Dissipation (Abs): 40 W

Capable of handling high power dissipation, making it suitable for applications requiring high power output.

Minimum DC Current Gain (hFE): 60

High DC current gain ensures reliable amplification of the input signal, providing consistent performance.

Maximum Operating Temperature: 150 °C

Can operate efficiently at high temperatures, allowing for use in a wide range of temperature conditions.

Maximum Collector-Emitter Voltage: 100 V

Able to withstand high voltage levels, making it suitable for applications requiring high voltage switching.

Maximum Collector Current (IC): 7 A

Can handle high collector currents, allowing for use in applications that require high current switching.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSA1010O attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

7 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

60

Maximum Fall Time (tf):

500 ns

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1.5 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

2000 ns

Maximum Turn On Time (ton):

500 ns

Maximum VCEsat:

.6 V

Trade Compliance

KSA1010O Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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