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KSA1142

Onsemi

KSA1142 by Onsemi

KSA1142 by Onsemi is a PNP BJT transistor with max VCEsat of 0.5V, hFE of 100, and IC of 0.1A. Ideal for amplifier applications due to its 180V max VCE, 8W power dissipation, and 180MHz fT. Package style is flange mount with through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,192 parts In-Stock

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Digiode

USA . 564 parts In-Stock

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Problanco Electronics

Mexico . 6,499 parts In-Stock

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Kulean Microsystems

USA . 5,312 parts In-Stock

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SupplyDigital Components

Austria . 4,304 parts In-Stock

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TANS Electronics

Latvia . 2,730 parts In-Stock

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Supply Digital

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Corphita

USA . 1,417 parts In-Stock

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Corohmni

South Africa . 481 parts In-Stock

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UHIMA Technologies

Türkiye . 410 parts In-Stock

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Overview

Experience superior performance and reliability with the KSA1142 from Onsemi. As a leading manufacturer in the industry, Onsemi's Power Bipolar Junction Transistor (BJT) offers unparalleled quality and durability. Ideal for amplifier applications, this PNP transistor provides a maximum VCEsat of just 0.5V, ensuring efficient power usage. With a minimum DC current gain of 100 and a maximum operating temperature of 150 °C, the KSA1142 delivers exceptional performance in a compact and convenient package. Trust Onsemi for all your transistor needs and elevate your projects to new heights of efficiency and success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Suitable for a wide range of applications and environments due to its durable and versatile nature.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifiers and switching circuits, making this product ideal for such applications.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to incorporate into electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and reliability in amplification tasks.

Maximum VCEsat: 0.5 V

Low saturation voltage helps minimize power loss and improve efficiency in operation.

Package Shape: RECTANGULAR

Compact shape allows for efficient use of space on circuit boards.

Terminal Form: THROUGH-HOLE

Offers secure and reliable connections for easy installation and maintenance.

Maximum Power Dissipation (Abs): 8 W

Can handle high power levels without overheating, ensuring long-term durability.

Package Style (Meter): FLANGE MOUNT

Facilitates easy mounting and heat dissipation, making it suitable for various applications.

Maximum Power Dissipation Ambient: 1.2 W

Can dissipate heat efficiently in ambient conditions, maintaining stable performance.

Minimum DC Current Gain (hFE): 100

High current gain ensures accurate amplification and consistent performance.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures, making it suitable for demanding environments.

Maximum Collector-Base Capacitance: 7 pF

Low capacitance minimizes signal distortion and interference in amplification circuits.

Maximum Collector-Emitter Voltage: 180 V

High breakdown voltage ensures reliable operation in demanding voltage conditions.

Transistor Element Material: SILICON

Silicon-based construction offers excellent performance and reliability in electronic circuits.

Maximum Collector Current (IC): 0.1 A

Allows for high current handling capacity, suitable for various amplification tasks.

Terminal Position: SINGLE

Simplified terminal layout enhances ease of installation and connection in circuits.

Nominal Transition Frequency (fT): 180 MHz

High transition frequency allows for fast switching speeds, ideal for amplifier applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSA1142 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

7 pF

Maximum Collector-Emitter Voltage:

180 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1.2 W

Maximum Power Dissipation (Abs):

8 W

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

KSA1142 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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