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KSA1142-Y

Samsung

KSA1142-Y by Samsung

Samsung's KSA1142-Y is a PNP BJT transistor with max VCEsat of 0.5V and hFE of 160, ideal for amplifier applications. With a max power dissipation of 8W and max collector-emitter voltage of 180V, it operates at up to 150°C, making it suitable for high-power amplification needs.

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Digiode

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Vyrian

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Nova Conductors

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Corohmni

South Africa . 239 parts In-Stock

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Aztec Data Supply Inc.

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AZTECH Wire

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Andel Nordic

Denmark . 3,441 parts In-Stock

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Semicontronic

India . 317 parts In-Stock

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Ampacity Inc.

Singapore . 1,242 parts In-Stock

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TANS Electronics

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Continental Prestige Electronics

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Alle Elektronik GmbH

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Problanco Electronics

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SupplyDigital Components

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Overview

Unlock the potential of your electronic projects with the Samsung KSA1142-Y Power Bipolar Junction Transistor. Manufactured by Samsung, a leader in innovative technology, this PNP transistor is perfect for amplifier applications. With a minimum DC current gain of 160 and a maximum VCEsat of 0.5V, you can trust in the quality and reliability of this product. Its isolated case connection and flange mount package style make it easy to integrate into your designs. Get the performance you need with the Samsung KSA1142-Y - the ideal choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, expanding the versatility of the product.

Maximum VCEsat: 0.5 V

Low saturation voltage helps in reducing power consumption and enhancing efficiency.

Configuration: SINGLE

Simplified design and easier integration into circuits.

Maximum Power Dissipation Ambient: 8 W

Can handle higher power loads without overheating, making it suitable for demanding applications.

Maximum Collector-Emitter Voltage: 180 V

Capable of handling high voltage levels, ensuring reliability in various voltage-driven systems.

Nominal Transition Frequency (fT): 180 MHz

High transition frequency allows for faster switching speeds, making it ideal for applications requiring high frequency operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSA1142-Y attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Samsung

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

7 pF

Maximum Collector-Emitter Voltage:

180 V

Configuration:

Minimum DC Current Gain (hFE):

160

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

8 W

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

KSA1142-Y Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Samsung

Samsung Electronics Co., Ltd. engages in the consumer electronics, information technology and mobile communications, and device solutions businesses worldwide. The company offers smartphones, tablets, watches, and accessories; TVs, projectors, and sound devices; home appliances, including refrigerators, washing machines and dryers, vacuum cleaners, cooking appliances, dishwashers, air conditioners, and air purifiers; monitors, and memory and storage products; displays, and smart and LED signages; and other accessories. It also engages in technology, venture capital investments, cloud services, network devices installation and optimization, semiconductor equipment services, digital advertising platforms, marketing, consulting, connected services, logistics, financing, and software design activities; toll processing of display panels and semiconductors; development and sale of network solutions; manufactures semiconductors and food; provision of repair services for electronic devices and enterprise automation solutions; and development and supply of semiconductor process defect and quality control software. The company serves various industries, including education, retail, and finance, as well as government and corporate customers. Samsung Electronics Co., Ltd. was incorporated in 1969 and is based in Suwon-si, South Korea.

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