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KSC5042MSTU

Fairchild Semiconductor

KSC5042MSTU by Fairchild Semiconductor

KSC5042MSTU by Fairchild Semiconductor is a NPN Power BJT with 900V VCEO, 0.1A IC, and 4W Ptot. Ideal for switching applications due to its single configuration and hFE of 30. Features through-hole terminals in a rectangular package suitable for flange mounting.

Median Price

$0.436

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Overview

Elevate your power management with the KSC5042MSTU by Fairchild Semiconductor. This high-quality Power Bipolar Junction Transistor offers a reliable solution for switching applications, boasting a maximum collector-emitter voltage of 900V and a maximum power dissipation of 4W. With its NPN configuration and matte tin terminal finish, this transistor ensures optimal performance and durability. Trust in Fairchild Semiconductor's expertise and choose the KSC5042MSTU for your next project to experience top-notch quality and seamless functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and durability, making the transistor less prone to damage and ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering versatility in various circuits.

Configuration: SINGLE

A single configuration simplifies circuit design and reduces complexity, making it easier to incorporate this transistor into different systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient performance in on/off states.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into different types of circuit boards or systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during assembly, ensuring reliable electrical connections.

Maximum Power Dissipation (Abs): 4 W

With a high power dissipation rating, this transistor can handle higher loads and operate efficiently without overheating.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this transistor can withstand increased heat levels during operation, ensuring reliable performance in various environments.

Maximum Collector-Emitter Voltage: 900 V

The high collector-emitter voltage rating allows the transistor to handle higher voltages, making it suitable for applications requiring high voltage switching.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance, stability, and reliability, making them ideal for a wide range of electronic applications.

Maximum Collector Current (IC): 0.1 A

The high collector current rating allows the transistor to handle higher current loads, making it suitable for applications requiring high current switching.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring stable electrical connections and durability over time.

Terminal Position: SINGLE

Single terminal position simplifies installation and ensures proper alignment in circuit boards, making it easy to integrate into various electronic systems.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSC5042MSTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Fairchild Semiconductor

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

900 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

4 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

KSC5042MSTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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