Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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KSC5027R by Onsemi is a NPN BJT transistor with max. Vce of 800V and max. Ic of 3A. With hFE of 15 and fT of 15MHz, it's ideal for switching applications in various industries due to its single configuration and through-hole terminals.
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The plastic/epoxy material is durable and can withstand various environmental conditions, making this transistor suitable for a wide range of applications.
NPN transistors are commonly used for amplification and switching applications, ensuring reliable performance in electronic circuits.
The single configuration simplifies circuit design and implementation, making this transistor easy to use for various projects.
Designed specifically for switching applications, this transistor offers fast response times and efficient operation in controlling electrical currents.
The rectangular shape allows for easy mounting and integration into circuit boards or electronic devices, ensuring a compact and streamlined design.
The through-hole terminals provide a secure and reliable connection to the circuit board, making installation and soldering processes easier and more efficient.
With three terminals, this transistor can be easily connected to external components in a circuit, offering flexibility and versatility in circuit design.
The flange mount package style offers mechanical stability and heat dissipation, making this transistor suitable for high-power applications that require efficient cooling.
With a minimum DC current gain of 15, this transistor provides consistent amplification of the input signal, ensuring reliable performance in various electronic applications.
The high maximum collector-emitter voltage rating of 800 V allows this transistor to handle high voltage applications with ease, providing robust protection against voltage spikes and surges.
Silicon-based transistors are known for their high performance and reliability, ensuring stable operation and longevity in electronic circuits.
With a maximum collector current of 3 A, this transistor can handle moderate to high current loads, making it suitable for power switching applications.
The single terminal position simplifies the connection process and ensures proper orientation in the circuit, minimizing the risk of wiring errors and short circuits.
The nominal transition frequency of 15 MHz indicates the speed at which this transistor can switch between on and off states, making it ideal for high-frequency applications that require fast switching times.
Power Bipolar Junction Transistors (BJT) KSC5027R attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi
Additional Features:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
JEDEC-95 Code:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
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Terminal Form:
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Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
KSC5027R Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
BSS138LT1G
Onsemi
BSS138LT1G by Onsemi is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.2A Drain Current, and 3.5 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Operates b/w -55 to 150 °C with small outline package style for surface mount assembly.
SMBJ18CA
Yangzhou Yangjie Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.05 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
USB2514BI-AEZG
Microchip Technology
USB2514BI-AEZG by Microchip is a BUS CONTROLLER IC with 36 terminals, operating at 3.3V, supporting I2C, SMBUS, and USB buses. It has a clock frequency of up to 24MHz and can withstand industrial temperatures from -40°C to 85°C. This chip carrier package is surface mountable and suitable for various applications requiring USB connectivity.
08055C104KAT4A
KYOCERA AVX
08055C104KAT4A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance, rated for 50V. With X7R temperature characteristics and -55 to 125 °C operating range, it's ideal for SMT applications requiring compact size and high reliability. The wraparound terminals and multi-layer design make it suitable for various electronic circuits.
FDN5618P
FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.
2N7002
Samsung
N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 5 ohm; No. of Terminals: 3;
2N2222A
ROHM
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;
NE555D
NXP Semiconductors
SQUARE; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR; Surface Mount: YES;
ABS25-32.768KHZ-T
Abracon
Abracon's ABS25-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 122% stability, and 50000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal frequency, such as IoT devices and precision timing systems in industrial settings.
NC7WZ17P6X
The Onsemi NC7WZ17P6X is a logic gate with 2 functions, featuring a propagation delay of 13.1 ns at 1.8V supply voltage. Ideal for industrial applications, it operates b/w -40 to 85°C and has a max power supply current of 100mA. With Schmitt Trigger technology and small outline packaging, it suits compact electronic designs requiring fast signal processing.
ULN2803A
Sanken Electric
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PDIP-T18; Package Body Material: PLASTIC/EPOXY;
RN41N-I/RM
Microchip Technology's RN41N-I/RM is a telecom IC with 35 terminals, operating from -40 to 85°C. It has a supply voltage of 3.3V and is surface mountable in industrial applications. The package style is rectangular, measuring 13.2mm x 20.1mm with a seated height of 2.2mm, suitable for telecom interface functions.
BAT54SLT1G
BAT54SLT1G by Onsemi is a fast recovery Schottky diode with 2 elements in series connected configuration. It has a max reverse recovery time of 0.005 us and a max forward voltage of 0.8 V. Ideal for applications requiring high-speed rectification, it operates b/w -55 to 150 °C and can handle a max output current of 0.2 A.
STM32H753IIK6
STMicroelectronics
STM32H753IIK6 by STMicroelectronics is a 32-bit microcontroller with 176 terminals, operating at up to 48 MHz. It features 20-Ch 16-Bit ADCs, 2-Ch 12-Bit DACs, and peripherals like CAN, ETHERNET, and USB. Ideal for industrial applications requiring high-speed processing and extensive connectivity options.
Nte Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .115 A; No. of Terminals: 3;
1N4148
Renesas Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
KSZ9031RNXIC
KSZ9031RNXIC by Microchip Technology is a network interface chip with 1 transceiver. It operates at a data rate of 1000 Mbps and has a nominal voltage of 1.2V. This chip is commonly used in industrial applications requiring Ethernet connectivity.
BSS138
Inter F E T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: TIN LEAD; Package Body Material: PLASTIC/EPOXY;
NUP2105LT1G
NUP2105LT1G by Onsemi is a Transient Suppression Device with 350W power dissipation, 29.1V breakdown voltage, and 44V clamping voltage. Commonly used in electronic circuits for surge protection due to its bidirectional polarity and silicon diode element material.
LM317T
Motorola
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; No. of Outputs: 1; Package Equivalence Code: SIP3,.1TB;
BD679A
Fairchild Semiconductor
NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
MJE340
Tt Electronics Plc
NPN; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Terminal Finish: TIN LEAD; Package Shape: RECTANGULAR; Package Style (Meter): FLANGE MOUNT;
TIP127
General Transistor
PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
TIP110
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Package Style (Meter): FLANGE MOUNT;
TIP117
Inchange Semiconductor
PNP; Configuration: DARLINGTON WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Collector-Emitter Voltage: 100 V;
MJD122T4
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A; Maximum Time At Peak Reflow Temperature (s): 30;
MJD127T4
MJD127T4 by Onsemi is a PNP BJT transistor with Darlington configuration, ideal for switching applications. It has a max collector-emitter voltage of 100V, max collector current of 8A, and min DC current gain of 100. With a package style of small outline and surface mount capability, it offers high power dissipation up to 20W in a compact rectangular shape.
TIP3055
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Collector Current (IC): 15 A; Minimum DC Current Gain (hFE): 5;
JANTXV2N3055
Aeroflex/metelics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; JESD-30 Code: O-MBFM-P2; No. of Elements: 1;
TIP29C
Continental Device India
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
BD679AS
The Onsemi BD679AS is a NPN Darlington BJT with 40W power dissipation, 750 min hFE, and 80V VCE. Ideal for switching applications, it operates up to 150°C and has a max collector current of 4A. Its package style is flange mount with matte tin finish in a rectangular shape.
TIP47
Power Innovations
NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 1 A; No. of Elements: 1; Terminal Form: THROUGH-HOLE;
TIP115
Taitron Components
PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Terminal Position: SINGLE; Transistor Application: AMPLIFIER;
Texas Instruments
TIP115 by Texas Instruments is a PNP Darlington transistor with max. power dissipation of 50W, hFE of 500, and max. collector current of 4A. Ideal for switching applications due to its high gain and low collector-emitter voltage drop. Package style is flange mount with through-hole terminals for easy installation.
TIP3055G
TIP3055G by Onsemi is a NPN BJT transistor with 90W power dissipation, 60V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150°C, it offers a min hFE of 5 and fT of 2.5MHz.
D44H11
New Jersey Semiconductor Products
NPN; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Package Style (Meter): FLANGE MOUNT; Terminal Position: SINGLE; Maximum Collector-Emitter Voltage: 80 V;
Baneasa S A
PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; JEDEC-95 Code: TO-220AB; Terminal Form: THROUGH-HOLE;
Rectron
PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Package Style (Meter): FLANGE MOUNT; JESD-609 Code: e3;
NJVMJD44H11T4G-VF01
NJVMJD44H11T4G-VF01 by Onsemi is a NPN BJT transistor with hFE of 40, VCE of 80V, and IC of 8A. Ideal for switching applications, it operates b/w -65 to 150°C. This small outline package with Gull Wing terminals is surface mountable and AEC-Q101 compliant.
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KSC5502DTM
KSC5502DTM by Onsemi is a NPN BJT transistor with 600V VCEO, 2A IC, and 50W Ptot. Ideal for switching applications, it features a built-in diode and operates up to 150°C. Its small outline package with gull wing terminals makes it suitable for surface mount designs.
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 11 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;
KSC5026MOS
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 15 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 1.5 A;
KSC5027OTU
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 15 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 3 A;
KSC5402DTF
KSC5603DTU
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Transition Frequency (fT): 11 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3 A;
KSC5042MSTU
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 4 W; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;
KSC5305DF
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 5 A; JESD-30 Code: R-PSFM-T3; Case Connection: ISOLATED;
KSC5305D
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 5 A; JESD-30 Code: R-PSFM-T3; No. of Elements: 1;
KSC5021Y
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 18 MHz; Maximum Collector Current (IC): 5 A; Terminal Form: THROUGH-HOLE;
KSC5305DFTTU
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 8;
KSC5305DTU
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 5 A; Package Shape: RECTANGULAR;
KSC5027O
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 15 MHz; Maximum Collector Current (IC): 3 A; Minimum DC Current Gain (hFE): 20;
KSC5021
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 18 MHz; Maximum Collector Current (IC): 5 A; No. of Elements: 1;
KSC5027
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 15 MHz; Maximum Collector Current (IC): 3 A; Minimum DC Current Gain (hFE): 8;
KSC5027RTU
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