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KSC5027R

Onsemi

KSC5027R by Onsemi

KSC5027R by Onsemi is a NPN BJT transistor with max. Vce of 800V and max. Ic of 3A. With hFE of 15 and fT of 15MHz, it's ideal for switching applications in various industries due to its single configuration and through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,780 parts In-Stock

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1,780

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Digiode

USA . 1,132 parts In-Stock

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1,132

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Nova Conductors

Japan . 1,050 parts In-Stock

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1,050

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Prism Electronics

USA . 331 parts In-Stock

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331

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Distributors (Availability)

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Ampacity Inc.

Singapore . 880 parts In-Stock

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$14.050

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880

$14.050

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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15,000

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Problanco Electronics

Mexico . 8,121 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,607 parts In-Stock

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5,607

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Alle Elektronik GmbH

Germany . 3,738 parts In-Stock

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3,738

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Corphita

USA . 2,580 parts In-Stock

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2,580

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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1,800

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Kulean Microsystems

USA . 1,681 parts In-Stock

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1,681

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UHIMA Technologies

Türkiye . 233 parts In-Stock

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233

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SupplyDigital Components

Austria . 231 parts In-Stock

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Aranea Global

USA . 150 parts In-Stock

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150

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Supply Digital

USA . 148 parts In-Stock

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Corohmni

South Africa . 121 parts In-Stock

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121

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Kepictronics

USA . 88 parts In-Stock

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88

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TANS Electronics

Latvia . 51 parts In-Stock

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Perfect Parts

USA . 2 parts In-Stock

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Overview

Unleash the power of innovation with the KSC5027R by Onsemi! Designed for optimal performance, this Power Bipolar Junction Transistor is a game-changer in the world of switching applications. With a maximum collector-emitter voltage of 800V and a nominal transition frequency of 15MHz, this NPN transistor offers unrivaled reliability and efficiency. Whether you're looking to upgrade your electronics or enhance your industrial equipment, the KSC5027R delivers exceptional quality and functionality. Trust Onsemi's reputation for excellence and experience the seamless integration of cutting-edge technology into your next project. Elevate your creations with the KSC5027R today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material is durable and can withstand various environmental conditions, making this transistor suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, ensuring reliable performance in electronic circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and implementation, making this transistor easy to use for various projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient operation in controlling electrical currents.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and integration into circuit boards or electronic devices, ensuring a compact and streamlined design.

Terminal Form: THROUGH-HOLE

The through-hole terminals provide a secure and reliable connection to the circuit board, making installation and soldering processes easier and more efficient.

No. of Terminals: 3

With three terminals, this transistor can be easily connected to external components in a circuit, offering flexibility and versatility in circuit design.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers mechanical stability and heat dissipation, making this transistor suitable for high-power applications that require efficient cooling.

Minimum DC Current Gain (hFE): 15

With a minimum DC current gain of 15, this transistor provides consistent amplification of the input signal, ensuring reliable performance in various electronic applications.

Maximum Collector-Emitter Voltage: 800 V

The high maximum collector-emitter voltage rating of 800 V allows this transistor to handle high voltage applications with ease, providing robust protection against voltage spikes and surges.

Transistor Element Material: SILICON

Silicon-based transistors are known for their high performance and reliability, ensuring stable operation and longevity in electronic circuits.

Maximum Collector Current (IC): 3 A

With a maximum collector current of 3 A, this transistor can handle moderate to high current loads, making it suitable for power switching applications.

Terminal Position: SINGLE

The single terminal position simplifies the connection process and ensures proper orientation in the circuit, minimizing the risk of wiring errors and short circuits.

Nominal Transition Frequency (fT): 15 MHz

The nominal transition frequency of 15 MHz indicates the speed at which this transistor can switch between on and off states, making it ideal for high-frequency applications that require fast switching times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSC5027R attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

800 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSC5027R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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