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KSC5021Y

Onsemi

KSC5021Y by Onsemi

The Onsemi KSC5021Y is a NPN BJT transistor with max. Vce of 500V and max. Ic of 5A. With hFE of 30, it's ideal for switching applications at a frequency of 18MHz in a flange mount package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,555 parts In-Stock

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Vyrian

USA . 993 parts In-Stock

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SupplyDigital Components

Austria . 8,358 parts In-Stock

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TANS Electronics

Latvia . 6,628 parts In-Stock

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Kulean Microsystems

USA . 5,323 parts In-Stock

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Problanco Electronics

Mexico . 3,813 parts In-Stock

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Corphita

USA . 3,249 parts In-Stock

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Supply Digital

USA . 1,537 parts In-Stock

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UHIMA Technologies

Türkiye . 830 parts In-Stock

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Corohmni

South Africa . 275 parts In-Stock

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Overview

Discover the power and reliability of the KSC5021Y by Onsemi, a top-quality Power Bipolar Junction Transistor designed for switching applications. With Onsemi's reputation for excellence in manufacturing, you can trust that this NPN transistor offers unmatched performance and durability. Whether you're looking to enhance your electronic projects or improve industrial systems, the KSC5021Y delivers the value, benefits, and advantages that customers seek. Upgrade to the KSC5021Y today and experience the difference in quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan and reliable performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile.

Configuration: SINGLE

Simplifies circuit design and installation, making it easier to integrate into various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in on/off control circuits.

Package Shape: RECTANGULAR

Easily mountable and compatible with standard PCB layouts, making it convenient for assembly.

Terminal Form: THROUGH-HOLE

Enables easy soldering onto PCBs, providing a secure and reliable connection for the transistor.

No. of Terminals: 3

Simple and straightforward connection setup, reducing the risk of errors during installation.

Package Style (Meter): FLANGE MOUNT

Allows for secure and stable mounting, ideal for applications where vibration or movement is a concern.

Minimum DC Current Gain (hFE): 30

Ensures consistent and reliable amplification of current in the circuit, improving overall performance.

Maximum Collector-Emitter Voltage: 500 V

Offers a high voltage tolerance, making it suitable for applications requiring higher voltage levels.

Transistor Element Material: SILICON

Silicon transistors are known for their high efficiency and reliability, contributing to the overall quality of the product.

Maximum Collector Current (IC): 5 A

Capable of handling higher current loads, making it suitable for power switching applications.

Terminal Position: SINGLE

Simplified connection layout, reducing the risk of wiring errors and ensuring a more efficient setup.

Nominal Transition Frequency (fT): 18 MHz

Provides high-frequency response, making it suitable for applications requiring fast switching speeds.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSC5021Y attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

500 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSC5021Y Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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