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KSC5402DTF

Onsemi

KSC5402DTF by Onsemi

KSC5402DTF by Onsemi is a NPN BJT transistor with 450V VCEO, 2A IC, and 50W Ptot. Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology. With an hFE of 6 and fT of 11MHz, it operates up to 150°C peak reflow temperature.

Median Price

$0.787

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 2 parts In-Stock

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$1.200

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$0.359

2

$1.200

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$0.359

Verical

USA . 2,000 parts In-Stock

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$0.374

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$0.374

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Flip Electronics

USA . 6,000 parts In-Stock

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$0.270

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$0.270

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Nova Conductors

Japan . 50 parts In-Stock

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$0.564

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$0.564

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Digiode

USA . 899 parts In-Stock

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$0.717

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899

$0.717

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Chip Stock

USA . 2,800 parts In-Stock

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2,800

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ComSIT Distribution GmbH

Germany . 1,484 parts In-Stock

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Cyclops Electronics Ltd

UK . 650 parts In-Stock

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650

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Speed Components Ltd

Israel . 87 parts In-Stock

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Vyrian

USA . 12 parts In-Stock

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12

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Ampacity Inc.

Singapore . 420 parts In-Stock

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$0.318

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420

$0.318

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Corohmni

South Africa . 92 parts In-Stock

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$0.374

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92

$0.374

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Argo Parts USA

USA . 2,568 parts In-Stock

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$0.564

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$0.547

2,568

$0.564

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$0.547

Netroflash

USA . 1,000 parts In-Stock

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$0.564

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1,000

$0.564

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Corphita

USA . 1,102 parts In-Stock

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$0.680

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$0.680

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Aztec Data Supply Inc.

USA . 469 parts In-Stock

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$0.774

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469

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Perfect Parts

USA . 29,560 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 19,711 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,340 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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SupplyDigital Components

Austria . 4,292 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,560 parts In-Stock

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Microchip USA

USA . 3,412 parts In-Stock

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Kulean Microsystems

USA . 3,288 parts In-Stock

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Problanco Electronics

Mexico . 2,915 parts In-Stock

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TANS Electronics

Latvia . 2,433 parts In-Stock

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Supply Digital

USA . 1,807 parts In-Stock

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UHIMA Technologies

Türkiye . 981 parts In-Stock

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981

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Continental Prestige Electronics

USA . 906 parts In-Stock

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$0.567

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$0.359

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$0.332

906

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$0.332

Kepictronics

USA . 95 parts In-Stock

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95

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Overview

Experience the superior performance and reliability of the Onsemi KSC5402DTF Power Bipolar Junction Transistor. Manufactured by industry leader Onsemi, this NPN transistor with a built-in diode is designed for switching applications, offering exceptional power dissipation of 50W and a maximum collector-emitter voltage of 450V. With a small outline package and surface-mount capability, the KSC5402DTF provides convenience and versatility for a wide range of electronic projects. Trust in Onsemi's reputation for quality and innovation, and unlock the full potential of your designs with this high-performance transistor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and durable, allowing for easy handling and long-term reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile and compatible with a wide range of circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and can protect against reverse voltage, enhancing the overall efficiency and functionality of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can handle rapid transitions between on and off states, making it ideal for power control and signal processing.

Surface Mount: YES

Surface mount technology allows for easy and compact integration onto PCBs, saving space and improving overall circuit density.

Maximum Power Dissipation (Abs): 50 W

With a high maximum power dissipation, this transistor can handle large amounts of power without overheating, ensuring reliable performance under heavy loads.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a standard form factor for easy mounting and mechanical stability in a variety of applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to operate in harsh environments without sacrificing performance or reliability.

Maximum Collector-Emitter Voltage: 450 V

The high maximum voltage rating makes this transistor suitable for high voltage applications, providing a wide range of potential uses in various circuits.

Nominal Transition Frequency (fT): 11 MHz

The high transition frequency allows for fast switching speeds and improved high-frequency performance, making this transistor ideal for rapid signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSC5402DTF attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

450 V

Minimum DC Current Gain (hFE):

6

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSC5402DTF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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