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KSC5305DFTTU

Onsemi

KSC5305DFTTU by Onsemi

KSC5305DFTTU by Onsemi is a NPN BJT transistor with 400V VCEO, 5A IC, and 75W Ptot. Ideal for switching applications, it features a single configuration with built-in diode in a rectangular package suitable for flange mount installations.

Median Price

$0.600

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 10,000 parts In-Stock

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$0.600

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$0.600

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Flip Electronics (Authorized)

USA . 8,888 parts In-Stock

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8,888

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Distributors (In-Stock)

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Vyrian

USA . 1,036 parts In-Stock

1+ parts

$0.590

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1,036

$0.590

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DigiKey Marketplace

USA . 10,000 parts In-Stock

1+ parts

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10,000

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Flip Electronics

USA . 8,888 parts In-Stock

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8,888

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Digiode

USA . 992 parts In-Stock

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992

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ACDS - Activité Composants Distribution Service

France . 300 parts In-Stock

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300

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Bristol Electronics

USA . 300 parts In-Stock

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300

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Dan-Mar Components

USA . 300 parts In-Stock

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300

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Distributors (Availability)

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Corohmni

South Africa . 248 parts In-Stock

1+ parts

$0.590

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248

$0.590

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Component Stockers USA

USA . 321 parts In-Stock

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$99.990

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321

$99.990

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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SupplyDigital Components

Austria . 8,232 parts In-Stock

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Kulean Microsystems

USA . 7,931 parts In-Stock

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Problanco Electronics

Mexico . 3,562 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,212 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Corphita

USA . 1,413 parts In-Stock

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Supply Digital

USA . 1,201 parts In-Stock

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Perfect Parts

USA . 654 parts In-Stock

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654

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TANS Electronics

Latvia . 578 parts In-Stock

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578

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Continental Prestige Electronics

USA . 503 parts In-Stock

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$0.479

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503

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$0.479

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UHIMA Technologies

Türkiye . 37 parts In-Stock

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Overview

Unleash the power of innovation with the KSC5305DFTTU by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors (BJT) that are designed for high-performance switching applications. With a maximum power dissipation of 75W and a maximum collector-emitter voltage of 400V, this NPN transistor offers unparalleled reliability and efficiency. Whether you're looking to enhance your electronic devices or optimize power management systems, the KSC5305DFTTU provides the perfect solution. Trust Onsemi for cutting-edge technology and superior performance that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environmental conditions.

Polarity or Channel Type: NPN

Allows for efficient amplification and switching of signals in electronic circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

Convenient built-in diode feature allows for simplified circuit design and increased efficiency.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Package Shape: RECTANGULAR

Space-efficient and easy to mount on circuit boards or other devices.

Terminal Form: THROUGH-HOLE

Enables secure and reliable connection to a circuit board.

Maximum Power Dissipation (Abs): 75 W

Can handle high power dissipation, making it suitable for applications requiring high power.

Package Style (Meter): FLANGE MOUNT

Allows for easy and secure mounting in various applications.

Minimum DC Current Gain (hFE): 8

Provides consistent and reliable amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for industrial applications.

Maximum Collector-Emitter Voltage: 400 V

Can withstand high voltages, making it suitable for high voltage applications.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 5 A

Capable of handling high currents, making it suitable for applications requiring high power.

Terminal Finish: MATTE TIN

Provides a durable and corrosion-resistant finish for the terminals, ensuring long-term reliability.

Terminal Position: SINGLE

Simplified terminal configuration for easy installation and connection in circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSC5305DFTTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

KSC5305DFTTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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