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KSC5305D

Onsemi

KSC5305D by Onsemi

The Onsemi KSC5305D is a NPN Power BJT with 400V VCE, 5A IC, and hFE of 8. Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package suitable for flange mount installations.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 2,802 parts In-Stock

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Vyrian

USA . 2,749 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2 parts In-Stock

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Problanco Electronics

Mexico . 5,714 parts In-Stock

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TANS Electronics

Latvia . 2,100 parts In-Stock

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Corphita

USA . 1,838 parts In-Stock

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SupplyDigital Components

Austria . 1,720 parts In-Stock

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Supply Digital

USA . 899 parts In-Stock

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UHIMA Technologies

Türkiye . 342 parts In-Stock

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Corohmni

South Africa . 320 parts In-Stock

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Kulean Microsystems

USA . 97 parts In-Stock

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Overview

Elevate your power switching capabilities with the KSC5305D from Onsemi. Crafted with precision and expertise, this NPN Power BJT boasts a robust design and reliable performance. Whether you're looking to optimize your energy efficiency or enhance your circuit design, this transistor is the perfect solution. With a maximum collector-emitter voltage of 400V and a maximum collector current of 5A, the KSC5305D offers unparalleled value and versatility for a wide range of applications. Trust in Onsemi's reputation for quality and innovation and take your projects to new heights with the KSC5305D.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it durable and reliable in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering high efficiency and performance.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and allows for reverse current protection, enhancing the functionality of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and high efficiency in turning on and off.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to mount and integrate into circuit boards, saving space and providing a neat layout.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and stable connection, ideal for applications that require high reliability and durability.

No. of Terminals: 3

With 3 terminals, this transistor can easily be connected in circuits and offers flexibility in various configurations.

Package Style (Meter): FLANGE MOUNT

The flange mount style allows for easy installation and secure mounting in place, suitable for industrial and heavy-duty applications.

Minimum DC Current Gain (hFE): 8

A minimum DC current gain of 8 ensures the transistor provides sufficient amplification for the desired application, offering reliable performance.

Maximum Collector-Emitter Voltage: 400 V

With a high maximum voltage rating of 400V, this transistor can handle higher voltage applications, providing versatility in design options.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low leakage, and good reliability, making them suitable for a wide range of applications.

Maximum Collector Current (IC): 5 A

With a maximum collector current of 5A, this transistor can handle moderate to high power applications, offering robust performance.

Terminal Position: SINGLE

The single terminal position simplifies circuit connections and ensures proper installation in the desired orientation, making it user-friendly.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSC5305D attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

KSC5305D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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