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KSC5027OTU

Onsemi

KSC5027OTU by Onsemi

KSC5027OTU by Onsemi is a NPN Power BJT with 800V VCEO, 3A IC, and 50W Ptot. Ideal for switching applications, it has a hFE of 20 and operates up to 150°C. The transistor comes in a rectangular package with through-hole terminals.

Median Price

$1.190

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 76 parts In-Stock

1+ parts

$0.735

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-

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76

$0.735

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Chip1Stop

Japan . 569 parts In-Stock

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$1.190

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569

$1.190

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Farnell

UK . 1,000 parts In-Stock

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$1.500

100+ parts

$0.820

1k+ parts

$0.678

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-

1,000

$1.500

$0.820

$0.678

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Element14

Singapore . 1,000 parts In-Stock

1+ parts

$1.690

100+ parts

$1.250

1k+ parts

$1.230

10k+ parts

$1.210

1,000

$1.690

$1.250

$1.230

$1.210

Mouser Electronics

USA . 2,078 parts In-Stock

1+ parts

$2.280

100+ parts

$1.070

1k+ parts

$1.010

10k+ parts

$0.830

2,078

$2.280

$1.070

$1.010

$0.830

DigiKey

USA . 373 parts In-Stock

1+ parts

$2.430

100+ parts

$1.068

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373

$2.430

$1.068

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EBV Elektronik

Germany . 15,000 parts In-Stock

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15,000

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Rochester

USA . 1,006 parts In-Stock

1+ parts

-

100+ parts

$0.934

1k+ parts

$0.775

10k+ parts

$0.691

1,006

-

$0.934

$0.775

$0.691

Verical

USA . 1,006 parts In-Stock

1+ parts

-

100+ parts

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$0.967

10k+ parts

$0.862

1,006

-

-

$0.967

$0.862

RS (Exports)

UK . 1,000 parts In-Stock

1+ parts

-

100+ parts

$0.926

1k+ parts

$0.783

10k+ parts

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1,000

-

$0.926

$0.783

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,868 parts In-Stock

1+ parts

$0.726

100+ parts

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1,868

$0.726

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Nova Conductors

Japan . 99 parts In-Stock

1+ parts

$0.874

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99

$0.874

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Chip Stock

USA . 1,125 parts In-Stock

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Vyrian

USA . 1,025 parts In-Stock

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1,025

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Flip Electronics

USA . 900 parts In-Stock

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900

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Prism Electronics

USA . 50 parts In-Stock

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50

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,371 parts In-Stock

1+ parts

$0.650

100+ parts

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1,371

$0.650

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Corphita

USA . 1,938 parts In-Stock

1+ parts

$0.688

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1,938

$0.688

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Corohmni

South Africa . 459 parts In-Stock

1+ parts

$0.698

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459

$0.698

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.874

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2,000

$0.874

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Argo Parts USA

USA . 209 parts In-Stock

1+ parts

$0.874

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209

$0.874

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Aztec Data Supply Inc.

USA . 4,970 parts In-Stock

1+ parts

$1.220

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4,970

$1.220

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Continental Prestige Electronics

USA . 1,871 parts In-Stock

1+ parts

$1.530

100+ parts

$0.918

1k+ parts

$0.596

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1,871

$1.530

$0.918

$0.596

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$1.886

100+ parts

$1.716

1k+ parts

$1.547

10k+ parts

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2,500

$1.886

$1.716

$1.547

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Perfect Parts

USA . 15,550 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 10,569 parts In-Stock

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SupplyDigital Components

Austria . 7,341 parts In-Stock

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Eastek

USA . 5,000 parts In-Stock

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TANS Electronics

Latvia . 2,255 parts In-Stock

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Supply Digital

USA . 1,408 parts In-Stock

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Kulean Microsystems

USA . 1,289 parts In-Stock

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Problanco Electronics

Mexico . 1,257 parts In-Stock

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1,257

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Assy Fe

Spain . 1,000 parts In-Stock

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1,000

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UHIMA Technologies

Türkiye . 827 parts In-Stock

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827

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Overview

Experience the superior quality and reliability of Onsemi with the KSC5027OTU Power Bipolar Junction Transistor. This NPN transistor is perfect for switching applications, offering a maximum operating temperature of 150°C and a maximum collector-emitter voltage of 800V. With a package style of flange mount and a terminal form of through-hole, this transistor provides easy installation and efficient performance. Trust in Onsemi's reputation for excellence and choose the KSC5027OTU for all your power transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring longevity and reliability in various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications due to their high performance and efficiency.

Configuration: SINGLE

Simplified design and easy integration into circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Maximum Power Dissipation (Abs): 50 W

Ability to handle high power dissipation, suitable for demanding applications.

Package Shape: RECTANGULAR

Compact and space-efficient design for easy mounting and installation.

Maximum Operating Temperature: 150 °C

Can operate efficiently at high temperatures, making it suitable for industrial environments.

Maximum Collector-Emitter Voltage: 800 V

High voltage handling capability for a wide range of applications.

Maximum Collector Current (IC): 3 A

Able to handle high collector currents, making it suitable for various power applications.

Nominal Transition Frequency (fT): 15 MHz

High transition frequency for fast switching speeds, ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSC5027OTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

800 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSC5027OTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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