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KSC5305DTU

Onsemi

KSC5305DTU by Onsemi

The Onsemi KSC5305DTU is a NPN BJT transistor with 400V VCE, 5A IC, and 75W Pd. Ideal for switching applications, it has a single configuration with built-in diode in a rectangular package suitable for flange mount. Operating up to 150 °C, it offers a min hFE of 8 and features through-hole terminals with tin finish.

Median Price

$0.680

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 9,000 parts In-Stock

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$0.680

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9,000

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$0.680

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Flip Electronics (Authorized)

USA . 6,500 parts In-Stock

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6,500

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Vyrian

USA . 2,821 parts In-Stock

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$0.680

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2,821

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DigiKey Marketplace

USA . 9,000 parts In-Stock

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Bristol Electronics

USA . 7,000 parts In-Stock

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Flip Electronics

USA . 6,500 parts In-Stock

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6,500

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Digiode

USA . 2,539 parts In-Stock

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2,539

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Resion

USA . 883 parts In-Stock

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883

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ComSIT Distribution GmbH

Germany . 248 parts In-Stock

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J2 Sourcing AB

Sweden . 79 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 133 parts In-Stock

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$0.680

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133

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Microchip USA

USA . 5,611 parts In-Stock

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$4.420

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5,611

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TANS Electronics

Latvia . 7,258 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,185 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,123 parts In-Stock

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Perfect Parts

USA . 3,360 parts In-Stock

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SupplyDigital Components

Austria . 2,822 parts In-Stock

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Supply Digital

USA . 1,668 parts In-Stock

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Problanco Electronics

Mexico . 1,216 parts In-Stock

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Kulean Microsystems

USA . 1,071 parts In-Stock

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Corphita

USA . 925 parts In-Stock

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UHIMA Technologies

Türkiye . 95 parts In-Stock

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95

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Overview

Elevate your power management solutions with the KSC5305DTU by Onsemi, a top-tier manufacturer known for their high-quality electronic components. This Power BJT transistor is perfect for switching applications, offering a maximum collector-emitter voltage of 400V and a maximum collector current of 5A. With a package style designed for flange mounting and a single configuration with built-in diode, this transistor is not only reliable but also versatile. Whether you're looking to optimize your power systems or enhance your circuit designs, the KSC5305DTU delivers unparalleled performance and value. Experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and cost-effective.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and are versatile in various circuit designs.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and provides protection against reverse current flow.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in controlling electrical signals.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and installation in a variety of electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection in PCBs.

No. of Terminals: 3

Having 3 terminals allows for flexibility in circuit connections and configurations.

Maximum Power Dissipation (Abs): 75 W

With a high power dissipation capacity, this transistor can handle heavy loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides mechanical stability and ease of mounting on heat sinks.

Minimum DC Current Gain (hFE): 8

A minimum DC current gain of 8 ensures reliable amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

Operates efficiently at high temperatures, making it suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 400 V

The high collector-emitter voltage rating allows for safe operation in circuits with high voltage requirements.

Transistor Element Material: SILICON

Silicon transistors offer superior performance and reliability compared to other materials.

Maximum Collector Current (IC): 5 A

Capable of handling up to 5 amps of collector current, making it suitable for high-power switching applications.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and resistance to corrosion for long-term reliability.

Terminal Position: SINGLE

Single terminal position simplifies connections and ensures proper alignment during installation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSC5305DTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

KSC5305DTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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