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KSC5021

Onsemi

KSC5021 by Onsemi

The Onsemi KSC5021 is a NPN Power BJT with max. Vce of 500V and max. Ic of 5A. It has a min. hFE of 8 and fT of 18MHz, ideal for switching applications in various industries due to its single configuration and through-hole terminal form.

Median Price

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Lifecycle Status

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3

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1k+

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Digiode

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Vyrian

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Kulean Microsystems

USA . 2,969 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 1,615 parts In-Stock

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TANS Electronics

Latvia . 1,566 parts In-Stock

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Problanco Electronics

Mexico . 823 parts In-Stock

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UHIMA Technologies

Türkiye . 546 parts In-Stock

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Overview

Discover the exceptional performance and reliability of the KSC5021 Power Bipolar Junction Transistor by Onsemi. Designed for switching applications, this NPN transistor offers a maximum collector-emitter voltage of 500 V and a maximum collector current of 5 A. With a minimum DC current gain of 8, the KSC5021 provides efficient power management in a variety of electronic devices. Trust in Onsemi's reputation for quality and innovation, and experience the value and benefits that this high-quality transistor brings to your projects. Elevate your designs with the KSC5021 and unleash the power of superior performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, ensuring a long lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and reduces complexity.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor operates efficiently in such scenarios.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into various electronic systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection in circuit boards.

No. of Terminals: 3

With three terminals, this transistor can be easily connected in circuits.

Package Style (Meter): FLANGE MOUNT

Flange mount style ensures easy installation and secure mounting in electronic devices.

Minimum DC Current Gain (hFE): 8

A higher minimum DC current gain ensures stable and reliable performance in various applications.

Maximum Collector-Emitter Voltage: 500 V

With a high voltage rating, this transistor can handle larger voltage loads in circuits.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low noise, and reliability, making them ideal for various electronic applications.

Maximum Collector Current (IC): 5 A

With a high collector current rating, this transistor can handle moderate to high current loads.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection in circuits.

Nominal Transition Frequency (fT): 18 MHz

High transition frequency allows for fast switching speeds and efficient performance in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSC5021 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

500 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSC5021 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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