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KSC5027

Onsemi

KSC5027 by Onsemi

The Onsemi KSC5027 is a NPN BJT transistor with max. collector-emitter voltage of 800V and max. collector current of 3A. With a min. DC current gain of 8 and fT of 15MHz, it's ideal for switching applications in various industries due to its single configuration and through-hole terminal form.

Median Price

$0.490

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Forefront Electronics and Design

USA . 10 parts In-Stock

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Bristol Electronics

USA . 4,747 parts In-Stock

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Vyrian

USA . 2,214 parts In-Stock

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Digiode

USA . 1,924 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Corohmni

South Africa . 68 parts In-Stock

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Perfect Parts

USA . 5,317 parts In-Stock

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Kulean Microsystems

USA . 5,075 parts In-Stock

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TANS Electronics

Latvia . 2,796 parts In-Stock

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Corphita

USA . 1,888 parts In-Stock

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Supply Digital

USA . 963 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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UHIMA Technologies

Türkiye . 494 parts In-Stock

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SupplyDigital Components

Austria . 392 parts In-Stock

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Problanco Electronics

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Overview

Enhance your electronic projects with the KSC5027 by Onsemi, a high-quality Power BJT that offers exceptional performance and reliability. Manufactured by industry leader Onsemi, this NPN transistor is ideal for switching applications, providing seamless functionality and efficiency. With a maximum collector-emitter voltage of 800V and a nominal transition frequency of 15MHz, this transistor is a versatile and valuable component for a wide range of projects. Upgrade your designs with the KSC5027 and experience the benefits of superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and reliable housing for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for various applications.

Configuration: SINGLE

Simplifies circuit design and makes it easier to integrate into existing setups.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Package Shape: RECTANGULAR

Allows for easy placement and soldering onto circuit boards.

Terminal Form: THROUGH-HOLE

Simplifies the process of soldering the transistor onto the PCB, making it suitable for manual assembly.

No. of Terminals: 3

Sufficient number of terminals for connecting the transistor in a circuit.

Package Style (Meter): FLANGE MOUNT

Enables secure mounting and dissipates heat effectively, enhancing the reliability of the transistor.

Minimum DC Current Gain (hFE): 8

Ensures adequate signal amplification in the circuit.

Maximum Collector-Emitter Voltage: 800 V

Withstands high voltage levels, making it suitable for applications requiring high voltage switching.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making this product a dependable choice.

Maximum Collector Current (IC): 3 A

Capable of handling high current levels, suitable for applications with moderate power requirements.

Terminal Position: SINGLE

Simplifies circuit connections and reduces complexity in circuit layout.

Nominal Transition Frequency (fT): 15 MHz

Suitable for high-frequency applications, ensuring efficient switching performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSC5027 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

800 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSC5027 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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