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KSC5603DTU

Onsemi

KSC5603DTU by Onsemi

KSC5603DTU by Onsemi is a NPN Power BJT with 800V VCE, 3A IC, and 3W Ptot. Ideal for switching applications, it has a hFE of 20 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$1.222

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 100 parts In-Stock

1+ parts

$0.801

100+ parts

$0.698

1k+ parts

$0.590

10k+ parts

-

100

$0.801

$0.698

$0.590

-

Element14

Singapore . 376 parts In-Stock

1+ parts

$1.222

100+ parts

$0.775

1k+ parts

$0.727

10k+ parts

$0.712

376

$1.222

$0.775

$0.727

$0.712

Farnell

UK . 376 parts In-Stock

1+ parts

$1.350

100+ parts

$0.755

1k+ parts

$0.710

10k+ parts

$0.696

376

$1.350

$0.755

$0.710

$0.696

DigiKey

USA . 1,307 parts In-Stock

1+ parts

$2.220

100+ parts

$0.968

1k+ parts

$0.710

10k+ parts

$0.608

1,307

$2.220

$0.968

$0.710

$0.608

Mouser Electronics

USA . 640 parts In-Stock

1+ parts

$2.220

100+ parts

$0.963

1k+ parts

$0.695

10k+ parts

-

640

$2.220

$0.963

$0.695

-

Newark

USA . 455 parts In-Stock

1+ parts

$2.480

100+ parts

$1.230

1k+ parts

$0.967

10k+ parts

$0.865

455

$2.480

$1.230

$0.967

$0.865

Rochester

USA . 5,147 parts In-Stock

1+ parts

-

100+ parts

$0.823

1k+ parts

$0.683

10k+ parts

$0.609

5,147

-

$0.823

$0.683

$0.609

Verical

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$1.212

1k+ parts

$0.783

10k+ parts

-

2,000

-

$1.212

$0.783

-

Master Electronics

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$1.025

1k+ parts

$0.666

10k+ parts

$0.587

2,000

-

$1.025

$0.666

$0.587

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,214 parts In-Stock

1+ parts

$0.641

100+ parts

-

1k+ parts

-

10k+ parts

-

1,214

$0.641

-

-

-

Nova Conductors

Japan . 37 parts In-Stock

1+ parts

$0.720

100+ parts

-

1k+ parts

-

10k+ parts

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37

$0.720

-

-

-

Flip Electronics

USA . 22,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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22,000

-

-

-

-

IBS Electronics

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$1.438

1k+ parts

$0.934

10k+ parts

$0.823

2,000

-

$1.438

$0.934

$0.823

Vyrian

USA . 1,413 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,413

-

-

-

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PC Components Company LLC

USA . 45 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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45

-

-

-

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Bristol Electronics

USA . 45 parts In-Stock

1+ parts

-

100+ parts

-

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45

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R&J Components

USA . 10 parts In-Stock

1+ parts

-

100+ parts

-

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-

10k+ parts

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10

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,646 parts In-Stock

1+ parts

$0.570

100+ parts

-

1k+ parts

-

10k+ parts

-

1,646

$0.570

-

-

-

Corphita

USA . 785 parts In-Stock

1+ parts

$0.608

100+ parts

-

1k+ parts

-

10k+ parts

-

785

$0.608

-

-

-

Corohmni

South Africa . 359 parts In-Stock

1+ parts

$0.675

100+ parts

-

1k+ parts

-

10k+ parts

-

359

$0.675

-

-

-

Argo Parts USA

USA . 2,638 parts In-Stock

1+ parts

$0.720

100+ parts

-

1k+ parts

-

10k+ parts

$0.698

2,638

$0.720

-

-

$0.698

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.720

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

$0.720

-

-

-

Continental Prestige Electronics

USA . 1,414 parts In-Stock

1+ parts

$1.550

100+ parts

$0.953

1k+ parts

$0.584

10k+ parts

-

1,414

$1.550

$0.953

$0.584

-

Microchip USA

USA . 9,319 parts In-Stock

1+ parts

$11.050

100+ parts

-

1k+ parts

-

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9,319

$11.050

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Perfect Parts

USA . 32,480 parts In-Stock

1+ parts

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100+ parts

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32,480

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TANS Electronics

Latvia . 7,781 parts In-Stock

1+ parts

-

100+ parts

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7,781

-

-

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Problanco Electronics

Mexico . 7,157 parts In-Stock

1+ parts

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7,157

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GreenTree Electronics

Israel . 6,000 parts In-Stock

1+ parts

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6,000

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SupplyDigital Components

Austria . 5,851 parts In-Stock

1+ parts

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5,851

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A-Z Elektronik GmbH

Germany . 5,796 parts In-Stock

1+ parts

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100+ parts

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5,796

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-

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Alle Elektronik GmbH

Germany . 3,864 parts In-Stock

1+ parts

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3,864

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

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2,000

-

-

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Glotronic Ltd.

UK . 1,800 parts In-Stock

1+ parts

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100+ parts

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1,800

-

-

-

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Kepictronics

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

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1,000

-

-

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Kulean Microsystems

USA . 911 parts In-Stock

1+ parts

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911

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UHIMA Technologies

Türkiye . 747 parts In-Stock

1+ parts

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747

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-

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Supply Digital

USA . 225 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

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225

-

-

-

-

Overview

Unleash the power of innovation with the KSC5603DTU by Onsemi. This high-quality Power Bipolar Junction Transistor (BJT) offers unparalleled performance and reliability, thanks to Onsemi's reputation for excellence in manufacturing. Ideal for switching applications, this NPN transistor with a built-in diode provides maximum power dissipation of 3 W and a collector-emitter voltage of 800 V. With a minimum DC current gain of 20 and a maximum operating temperature of 150°C, the KSC5603DTU guarantees optimal functionality and efficiency. Upgrade your projects with this cutting-edge component and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: NPN

Allows for easy integration into NPN transistor circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by including a built-in diode.

Transistor Application: SWITCHING

Designed for efficient switching applications.

Package Shape: RECTANGULAR

Facilitates easy mounting and installation in various electronic devices.

Terminal Form: THROUGH-HOLE

Enables secure and reliable solder connections.

No. of Terminals: 3

Provides necessary connections for proper functioning.

Maximum Power Dissipation (Abs): 3 W

Suitable for applications requiring moderate power dissipation.

Package Style (Meter): FLANGE MOUNT

Allows for convenient mounting on a flange.

Minimum DC Current Gain (hFE): 20

Ensures consistent amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

Capable of operating reliably in various temperature conditions.

Maximum Collector-Emitter Voltage: 800 V

Suitable for high voltage applications.

Transistor Element Material: SILICON

Provides reliable performance and durability.

Maximum Collector Current (IC): 3 A

Can handle moderate levels of collector current.

Terminal Finish: Matte Tin (Sn) - annealed

Provides a durable and corrosion-resistant terminal finish.

Terminal Position: SINGLE

Simplifies circuit connections.

Nominal Transition Frequency (fT): 11 MHz

Allows for high-speed switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSC5603DTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

800 V

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

3 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSC5603DTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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