Loading...

Power Bipolar Junction Transistors (BJT)

Power Bipolar Junction Transistors (BJT) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as power supplies, motor drives, and welding equipment.

The Power BJT is a three-layer device that consists of an emitter, base, and collector region. The emitter and collector are heavily doped, while the base region is lightly doped. The power BJT works by controlling the flow of majority charge carriers (electrons or holes) from the emitter to the collector region through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

Power BJTs are designed to handle high current and voltage levels, and have a low on-resistance and high gain. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.

Proper selection and use of Power BJTs are critical to ensure safe and reliable operation of power electronics systems. Power BJTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.

Power Bipolar Junction Transistors (BJT)

Available Parts 612

Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BD244CTU by Onsemi

BD244CTU

Onsemi

The Onsemi BD244CTU is a PNP BJT transistor with max VCEsat of 1.5V, IC of 6A, and hFE of 15. Ideal for switching applications, it operates b/w -65 to 150°C with a max VCE of 100V. Its package style is flange mount with through-hole terminals in a rectangular shape.

COLLECTOR

6 A

100 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

65 W

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

1.5 V

KSC1173YTSTUA by Onsemi

KSC1173YTSTUA

Onsemi

KSC1173YTSTUA by Onsemi is a NPN BJT transistor with max VCEsat of 0.8V, hFE of 120, and IC of 3A. Ideal for amplifier applications, it has a max operating temp of 150 °C and collector-emitter voltage of 30V. The package style is flange mount with through-hole terminals in a rectangular shape.

3 A

35 pF

30 V

SINGLE

120

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

10 W

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

100 MHz

.8 V

NSV60200DMTWTBG by Onsemi

NSV60200DMTWTBG

Onsemi

NSV60200DMTWTBG by Onsemi is a PNP BJT transistor with VCEsat of 0.45V, hFE of 40, and IC of 2A. Ideal for switching applications, it has a max operating temp of 150 °C and collector-emitter voltage of 60V. Suitable for surface mount with small outline package style.

COLLECTOR

2 A

18 pF

60 V

SEPARATE, 2 ELEMENTS

40

S-PDSO-N6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

PNP

1.8 W

2.27 W

AEC-Q101

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

155 MHz

.45 V

ZXTP2014ZQTA by Diodes Incorporated

ZXTP2014ZQTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Power Dissipation (Abs): 2.1 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

33 pF

140 V

SINGLE

45

R-PSSO-F3

e3

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2.1 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON

120 MHz

.33 V

FZT705QTA by Diodes Incorporated

FZT705QTA

Diodes Incorporated

PNP; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 2 A;

COLLECTOR

2 A

15 pF

120 V

DARLINGTON

2000

R-PDSO-G4

e3

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

160 MHz

2.5 V

MJE270TG by Onsemi

MJE270TG

Onsemi

MJE270TG by Onsemi is a NPN Darlington BJT with max VCEsat of 3V, hFE of 1500, and IC of 2A. Ideal for power applications, it has a max power dissipation of 15W and operates b/w -65 to 150 °C. Suitable for use in various electronic circuits requiring high current amplification.

COLLECTOR

2 A

100 V

DARLINGTON

1500

TO-225

R-PSFM-T3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

1.5 W

15 W

NO

THROUGH-HOLE

SINGLE

SILICON

6 MHz

3 V

BCP5616TQTA by Diodes Incorporated

BCP5616TQTA

Diodes Incorporated

BCP5616TQTA by Diodes Inc. is a NPN BJT transistor for switching applications. With VCEsat of 0.5V, hFE of 40, and IC of 1A, it operates at temperatures from -55 to 150°C. This small outline package with Gull Wing terminals is ideal for high-speed switching in automotive and industrial electronics.

COLLECTOR

1 A

25 pF

80 V

SINGLE

40

R-PDSO-G4

e3

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2.5 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

.5 V

BCP5616TQTC by Diodes Incorporated

BCP5616TQTC

Diodes Incorporated

Diodes Inc. BCP5616TQTC is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 40, and IC of 1A. Ideal for small outline SMT designs in automotive and industrial electronics with operating temp range -55 to 150°C.

COLLECTOR

1 A

25 pF

80 V

SINGLE

40

R-PDSO-G4

e3

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2.5 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

.5 V

FMMT411FDBW-7 by Diodes Incorporated

FMMT411FDBW-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 110 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): 5 A;

COLLECTOR

5 A

17 pF

15 V

SINGLE

100

S-PDSO-N3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

NPN

1.8 W

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

110 MHz

.1 V

TTA004B,Q by Toshiba

TTA004B,Q

Toshiba

TTA004B,Q by Toshiba is a PNP BJT transistor with 160V VCE, 0.5V VCEsat, and 1.5A IC. Ideal for amplifier applications, it has a max power dissipation of 10W and hFE of 140. With a package style of FLANGE MOUNT and operating temp up to 150°C, it offers high performance in through-hole configuration.

1.5 A

17 pF

160 V

SINGLE

140

TO-126

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

1.5 W

10 W

NO

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

100 MHz

.5 V

2SA1943N(S1,E,S) by Toshiba

2SA1943N(S1,E,S)

Toshiba

Toshiba's 2SA1943N(S1,E,S) is a PNP BJT with max VCEsat of 3V, ideal for amplifier applications. With a max power dissipation of 150W and max collector-emitter voltage of 230V, it offers high performance in audio amplifiers. Featuring a min hFE of 35 and fT of 30MHz, this transistor ensures efficient signal processing in various electronic circuits.

COLLECTOR

15 A

360 pF

230 V

SINGLE

35

R-XSFM-T3

1

3

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

PNP

150 W

NO

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

3 V

BCP56-16-QF by Nexperia

BCP56-16-QF

Nexperia

Nexperia's BCP56-16-QF is a NPN BJT transistor for switching applications. With VCEsat of 0.5V, hFE of 40, and IC of 1A, it operates at -55 to 150°C. Its GULL WING terminals and COLLECTOR case connection make it suitable for surface mount designs in automotive electronics.

COLLECTOR

1 A

6 pF

80 V

SINGLE

40

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.35 W

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

180 MHz

.5 V

BCP56-16T-QF by Nexperia

BCP56-16T-QF

Nexperia

BCP56-16T-QF by Nexperia is a NPN Power BJT for switching applications. It features a max VCEsat of 0.5V, hFE of 63, and can handle a max IC of 1A. With a small outline package style and peak reflow temperature of 260°C, it meets AEC-Q101 and IEC-60134 standards for automotive use.

COLLECTOR

1 A

4.5 pF

80 V

SINGLE

63

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.8 W

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

155 MHz

.5 V

2N2222AUATXV by Tt Electronics Plc

2N2222AUATXV

Tt Electronics Plc

2N2222AUATXV by Tt Electronics Plc is a NPN BJT transistor with VCEsat of 1V, hFE of 100, and IC of 0.8A. Ideal for switching applications, it has a max operating temp of 200°C and TOFF of 300ns. Its small outline package makes it suitable for various electronic designs.

.8 A

8 pF

50 V

SINGLE

100

R-CDSO-N4

1

4

200 Cel

-65 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

SMALL OUTLINE

NPN

.5 W

1.16 W

MIL-19500

YES

NO LEAD

DUAL

SWITCHING

SILICON

300 ns

35 ns

1 V

DXTN22040DFG-7 by Diodes Incorporated

DXTN22040DFG-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 198 MHz; Maximum Power Dissipation (Abs): 2.3 W; Maximum Collector Current (IC): 2 A;

COLLECTOR

2 A

11 pF

40 V

SINGLE

140

S-PDSO-F8

e3

1

8

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

NPN

2.3 W

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

198 MHz

.6 V

ZTN23015CFHQTA by Diodes Incorporated

ZTN23015CFHQTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 235 MHz; Maximum Power Dissipation (Abs): 1.25 W; Maximum Collector Current (IC): 6 A;

6 A

56 pF

15 V

SINGLE

150

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.25 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

235 MHz

.18 V

ZDT795AQTA by Diodes Incorporated

ZDT795AQTA

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 2.75 W; Maximum Collector Current (IC): .5 A;

.5 A

15 pF

140 V

SEPARATE, 2 ELEMENTS

100

R-PDSO-G8

e3

1

2

8

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2.75 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

100 MHz

.3 V

DXTN3C100PD-13 by Diodes Incorporated

DXTN3C100PD-13

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): 3 A; Terminal Finish: MATTE TIN;

COLLECTOR

3 A

11 pF

100 V

SEPARATE, 2 ELEMENTS

10

R-PDSO-F8

e3

2

8

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

130 MHz

.33 V

DXTC3C100PD-13 by Diodes Incorporated

DXTC3C100PD-13

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): 3 A; Minimum Operating Temperature: -55 Cel;

COLLECTOR

3 A

11 pF

100 V

SEPARATE, 2 ELEMENTS

10

R-PDSO-F8

e3

2

8

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

130 MHz

.33 V

ZTP25040DFHQTA by Diodes Incorporated

ZTP25040DFHQTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 270 MHz; Maximum Power Dissipation (Abs): 1.25 W; Maximum Collector Current (IC): 3 A;

3 A

17.4 pF

40 V

SINGLE

30

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.25 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

270 MHz

.22 V

BCP5616TTC by Diodes Incorporated

BCP5616TTC

Diodes Incorporated

Diodes Inc. BCP5616TTC is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 40, and IC of 1A. Ideal for small outline packages in surface mount configurations with a max operating temp of 150°C.

COLLECTOR

1 A

25 pF

80 V

SINGLE

40

R-PDSO-G4

e3

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2.5 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

.5 V

BCP5616TTA by Diodes Incorporated

BCP5616TTA

Diodes Incorporated

Diodes Inc. BCP5616TTA is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 40, and IC of 1A. Ideal for small outline packages in surface mount designs with operating temperatures up to 150°C.

COLLECTOR

1 A

25 pF

80 V

SINGLE

40

R-PDSO-G4

e3

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2.5 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

.5 V

DXTN06080BFG-7 by Diodes Incorporated

DXTN06080BFG-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): 2.1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

11 pF

80 V

SINGLE

25

S-PDSO-F8

e3

1

8

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

NPN

2.1 W

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

130 MHz

.5 V

BCP56-QF by Nexperia

BCP56-QF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.35 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

6 pF

80 V

SINGLE

40

R-PDSO-G4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.35 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

180 MHz

.5 V

BCP56-10T-QF by Nexperia

BCP56-10T-QF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 155 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

4.5 pF

80 V

SINGLE

63

R-PDSO-G4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.8 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

155 MHz

.5 V

BCP56-QX by Nexperia

BCP56-QX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.35 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

6 pF

80 V

SINGLE

40

R-PDSO-G4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.35 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

180 MHz

.5 V

BCP56-10-QF by Nexperia

BCP56-10-QF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.35 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

6 pF

80 V

SINGLE

40

R-PDSO-G4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.35 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

180 MHz

.5 V

BCP56-10-QX by Nexperia

BCP56-10-QX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.35 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

6 pF

80 V

SINGLE

40

R-PDSO-G4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.35 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

180 MHz

.5 V

BCP56T-QX by Nexperia

BCP56T-QX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 155 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

4.5 pF

80 V

SINGLE

63

R-PDSO-G4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.8 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

155 MHz

.5 V

BCP55-16-QX by Nexperia

BCP55-16-QX

Nexperia

BCP55-16-QX by Nexperia is a NPN Power BJT for switching applications. It features a max VCEsat of 0.5V, hFE of 40, and can handle up to 1A IC. With a max operating temperature of 150°C, it's ideal for automotive electronics (AEC-Q101) and general purpose circuits requiring high-speed switching (fT: 180MHz).

COLLECTOR

1 A

6 pF

60 V

SINGLE

40

R-PDSO-G4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.35 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

180 MHz

.5 V

BCP55-16-QF by Nexperia

BCP55-16-QF

Nexperia

Nexperia's BCP55-16-QF is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.5V, hFE of 40, and can handle a max collector-emitter voltage of 60V. With a small outline package style and Gull Wing terminals, it operates b/w -55 to 150 °C and is ideal for AEC-Q101 automotive standards.

COLLECTOR

1 A

6 pF

60 V

SINGLE

40

R-PDSO-G4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.35 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

180 MHz

.5 V

BCP55-QX by Nexperia

BCP55-QX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.35 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

6 pF

60 V

SINGLE

40

R-PDSO-G4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.35 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

180 MHz

.5 V

BCP55-QF by Nexperia

BCP55-QF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.35 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

6 pF

60 V

SINGLE

40

R-PDSO-G4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.35 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

180 MHz

.5 V

BCP55-10-QX by Nexperia

BCP55-10-QX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.35 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

6 pF

60 V

SINGLE

40

R-PDSO-G4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.35 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

180 MHz

.5 V

PZTA44-QX by Nexperia

PZTA44-QX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 1.35 W; Maximum Collector Current (IC): .3 A;

COLLECTOR

.3 A

7 pF

500 V

SINGLE

50

R-PDSO-G4

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.35 W

AEC-Q101; IEC-134

YES

GULL WING

DUAL

AMPLIFIER

SILICON

20 MHz

.75 V

FZT855QTA by Diodes Incorporated

FZT855QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 90 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 5 A;

COLLECTOR

5 A

22 pF

150 V

SINGLE

15

R-PDSO-G4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

3 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

GULL WING

DUAL

SILICON

90 MHz

.355 V