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BCP5616TQTA

Diodes Incorporated

BCP5616TQTA by Diodes Incorporated

BCP5616TQTA by Diodes Inc. is a NPN BJT transistor for switching applications. With VCEsat of 0.5V, hFE of 40, and IC of 1A, it operates at temperatures from -55 to 150°C. This small outline package with Gull Wing terminals is ideal for high-speed switching in automotive and industrial electronics.

Median Price

$0.304

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,577 parts In-Stock

1+ parts

$0.530

100+ parts

$0.204

1k+ parts

$0.123

10k+ parts

-

2,577

$0.530

$0.204

$0.123

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Verical

USA . 34,000 parts In-Stock

1+ parts

-

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10k+ parts

$0.078

34,000

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-

$0.078

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 870 parts In-Stock

1+ parts

$0.112

100+ parts

-

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870

$0.112

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Vyrian

USA . 8,753 parts In-Stock

1+ parts

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8,753

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VNN

France . 1,000 parts In-Stock

1+ parts

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1,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 11,189 parts In-Stock

1+ parts

$0.066

100+ parts

-

1k+ parts

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11,189

$0.066

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QUARKTWIN TECHNOLOGY LTD

USA . 8,068 parts In-Stock

1+ parts

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8,068

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Eastek

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.103

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1,000

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-

$0.103

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Bastille Electronics

Australia . 450 parts In-Stock

1+ parts

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450

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Overview

Unleash the power of innovation with the BCP5616TQTA by Diodes Incorporated. Crafted with precision and reliability, this Power Bipolar Junction Transistor is designed for high-performance switching applications. Its NPN configuration and low VCEsat ensure efficient operation while its small outline package makes it ideal for space-constrained designs. With a wide operating temperature range and robust construction, the BCP5616TQTA offers customers unmatched value and performance. Elevate your projects with the trusted quality and advanced technology of Diodes Incorporated.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile.

Configuration: SINGLE

Simplified design with single configuration for easier circuit integration.

Transistor Application: SWITCHING

Optimized for switching applications, providing fast operation and efficiency.

Surface Mount: YES

Suitable for automated assembly processes and compact designs.

Maximum VCEsat: 0.5 V

Low saturation voltage minimizes power loss and improves efficiency.

Package Shape: RECTANGULAR

Space-efficient design that allows for easy placement on PCBs.

Terminal Form: GULL WING

Gull wing terminals provide reliable solder connections for secure mounting.

No. of Terminals: 4

Simple four-terminal configuration for easy integration into circuits.

Maximum Power Dissipation (Abs): 2.5 W

Can handle moderate power levels without overheating, ensuring reliability.

Package Style (Meter): SMALL OUTLINE

Compact package style for space-constrained applications.

Minimum DC Current Gain (hFE): 40

Consistent amplification capabilities with minimum DC current gain.

Maximum Operating Temperature: 150 °C

High operating temperature range for versatility in various environments.

Maximum Collector-Base Capacitance: 25 pF

Low capacitance for minimal signal distortion in high-frequency applications.

Maximum Collector-Emitter Voltage: 80 V

Suitable for applications requiring higher voltage levels.

Transistor Element Material: SILICON

Silicon material provides reliable performance and durability.

Minimum Operating Temperature: -55 °C

Wide temperature range for operation in extreme conditions.

Maximum Collector Current (IC): 1 A

Able to handle moderate collector current for various applications.

Terminal Finish: MATTE TIN

Matte tin finish for reliable solder connections and corrosion resistance.

Terminal Position: DUAL

Dual terminal position for versatile mounting options.

Case Connection: COLLECTOR

Collector case connection for efficient heat dissipation.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during assembly processes.

Reference Standard: AEC-Q101; IATF 16949; MIL-STD-202

Compliance with industry standards ensures quality and reliability.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency for fast switching and signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCP5616TQTA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

25 pF

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IATF 16949; MIL-STD-202

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

BCP5616TQTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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