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BCP56-16-QF

Nexperia

BCP56-16-QF by Nexperia

Nexperia's BCP56-16-QF is a NPN BJT transistor for switching applications. With VCEsat of 0.5V, hFE of 40, and IC of 1A, it operates at -55 to 150°C. Its GULL WING terminals and COLLECTOR case connection make it suitable for surface mount designs in automotive electronics.

Median Price

$0.076

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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EBV Elektronik

Germany . 20,000 parts In-Stock

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Arrow

USA . 4,000 parts In-Stock

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$0.076

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Verical

USA . 4,000 parts In-Stock

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$0.076

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$0.076

Chip1Stop

Japan . 4,000 parts In-Stock

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$0.076

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Nova Conductors

Japan . 300 parts In-Stock

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$0.131

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300

$0.131

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Chip Stock

USA . 100,000 parts In-Stock

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VNN

France . 26,853 parts In-Stock

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Vyrian

USA . 7,556 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 24,708 parts In-Stock

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$0.065

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Netroflash

USA . 1,000 parts In-Stock

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$0.131

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$0.124

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$0.122

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$0.131

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Microchip USA

USA . 8,996 parts In-Stock

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$0.735

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$0.735

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AZTECH Wire

Italy . 8,145 parts In-Stock

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$22.040

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Eastek

USA . 64,000 parts In-Stock

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64,000

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Glotronic Ltd.

UK . 6,400 parts In-Stock

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Supply Digital

USA . 2,173 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Overview

Unleash the power of reliable performance with the BCP56-16-QF by Nexperia. Crafted with precision and excellence, this NPN Power Bipolar Junction Transistor is perfect for switching applications, offering a maximum VCEsat of 0.5V and a minimum DC current gain of 40. With a robust package body material and superior configuration, this transistor ensures efficient operation and long-lasting durability. Elevate your projects with the quality and value that only Nexperia can provide. Experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the transistor easy to handle and versatile in various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, providing high current gain and fast switching speeds.

Configuration: SINGLE

Single configuration allows for simple circuit design and integration into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation.

Surface Mount: YES

Surface mount technology allows for easy and compact PCB assembly, saving space and reducing manufacturing costs.

Maximum VCEsat: 0.5 V

Low VCEsat results in minimal power loss and high efficiency in switching operations.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy placement on PCBs and ensures proper alignment during assembly.

Terminal Form: GULL WING

Gull wing terminals provide secure solder connections and improved thermal conductivity for better performance.

No. of Terminals: 4

Four terminals simplify the connection process and allow for easy integration into circuits.

Maximum Power Dissipation (Abs): 1.35 W

High power dissipation capability ensures reliable operation under varying load conditions.

Package Style (Meter): SMALL OUTLINE

Compact small outline package saves space on PCBs and enhances thermal performance.

Minimum DC Current Gain (hFE): 40

High minimum DC current gain ensures stable and consistent performance in amplification and switching applications.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for operation in harsh environments without compromising performance.

Maximum Collector-Base Capacitance: 6 pF

Low collector-base capacitance minimizes signal distortion and ensures high-frequency performance.

Maximum Collector-Emitter Voltage: 80 V

High collector-emitter voltage rating provides a wider voltage range for various applications.

Transistor Element Material: SILICON

Silicon material offers high thermal stability and reliability, ideal for demanding applications.

Minimum Operating Temperature: -55 °C

Wide temperature range allows for operation in extreme cold conditions without any performance issues.

Maximum Collector Current (IC): 1 A

High collector current rating enables the transistor to handle large loads without overheating.

Terminal Finish: TIN

Tin terminal finish provides corrosion resistance and ensures long-term reliability in various environments.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting options and easy connection to other components.

Case Connection: COLLECTOR

Collector case connection simplifies circuit layout and enhances heat dissipation for better performance.

Maximum Time At Peak Reflow Temperature (s): 30

Quick reflow time ensures efficient and reliable soldering during manufacturing processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering and reliability under extreme temperature conditions.

Reference Standard: AEC-Q101; IEC-60134

Compliance with industry standards ensures quality and reliability for automotive and electronic applications.

Nominal Transition Frequency (fT): 180 MHz

High nominal transition frequency enables fast switching speeds and high-frequency performance in various applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCP56-16-QF attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

6 pF

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

BCP56-16-QF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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