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BCP55-16-QF

Nexperia

BCP55-16-QF by Nexperia

Nexperia's BCP55-16-QF is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.5V, hFE of 40, and can handle a max collector-emitter voltage of 60V. With a small outline package style and Gull Wing terminals, it operates b/w -55 to 150 °C and is ideal for AEC-Q101 automotive standards.

Median Price

$0.131

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 700 parts In-Stock

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Chip Stock

USA . 141,000 parts In-Stock

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VNN

France . 2,831 parts In-Stock

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Vyrian

USA . 2,054 parts In-Stock

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Argo Parts USA

USA . 3,851 parts In-Stock

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$0.127

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Continental Prestige Electronics

USA . 750 parts In-Stock

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Microchip USA

USA . 8,977 parts In-Stock

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$0.735

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Corohmni

South Africa . 187 parts In-Stock

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$0.872

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Aztec Data Supply Inc.

USA . 3,591 parts In-Stock

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$1.665

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Ampacity Inc.

Singapore . 1,402 parts In-Stock

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$11.050

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AZTECH Wire

Italy . 10,384 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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Supply Digital

USA . 141 parts In-Stock

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Overview

Power up your projects with the BCP55-16-QF by Nexperia, a high-quality Power Bipolar Junction Transistor perfect for switching applications. Manufactured with precision and expertise, this NPN transistor offers a maximum VCEsat of only 0.5V and a minimum DC current gain of 40, ensuring optimal performance and energy efficiency. With a compact small outline package and dual terminal position, this transistor is easy to integrate and ideal for various electronic devices. Trust Nexperia for reliable components that deliver exceptional value and performance. Elevate your designs with the BCP55-16-QF and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to external elements, making this product suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, providing versatility in circuit design.

Configuration: SINGLE

A single configuration simplifies circuit design and integration, making it easier to use in different electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance and efficiency in switching operations.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving space and reducing overall system cost.

Maximum VCEsat: 0.5 V

Low VCEsat value indicates minimal voltage drop across the transistor, leading to lower power dissipation and increased efficiency.

Package Shape: RECTANGULAR

Rectangular package shape offers compatibility with standard PCB layouts and facilitates easy mounting in electronic circuits.

Terminal Form: GULL WING

Gull wing terminal form provides strong mechanical connection and ease of soldering during PCB assembly.

No. of Terminals: 4

Four terminals offer flexibility in circuit connections and compatibility with various circuit configurations.

Maximum Power Dissipation (Abs): 1.35 W

High maximum power dissipation enables the transistor to handle high power levels without overheating, ensuring long-term reliability.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, making it suitable for compact electronic devices with limited board space.

Minimum DC Current Gain (hFE): 40

Minimum DC current gain ensures reliable amplification of signals in various applications, offering consistent performance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the transistor to withstand elevated temperatures, making it suitable for industrial and automotive applications.

Maximum Collector-Base Capacitance: 6 pF

Low collector-base capacitance minimizes signal distortion and improves high-frequency performance in applications requiring fast switching speeds.

Maximum Collector-Emitter Voltage: 60 V

High maximum collector-emitter voltage rating provides robustness and reliability in high-voltage applications, ensuring safe operation.

Transistor Element Material: SILICON

Silicon material offers superior performance and reliability, making the transistor ideal for a wide range of electronic applications.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows the transistor to function in cold environments, expanding its usability in different conditions.

Maximum Collector Current (IC): 1 A

High maximum collector current rating enables the transistor to handle significant current flows, making it suitable for power switching applications.

Terminal Position: DUAL

Dual terminal position facilitates easy connection to external circuitry, enhancing versatility and compatibility with different circuit layouts.

Case Connection: COLLECTOR

Collector case connection simplifies circuit connection and layout, making it easier to integrate the transistor into various electronic designs.

Reference Standard: AEC-Q101; IEC-60134

Adherence to industry standards ensures compliance and compatibility with electronic systems, ensuring quality and performance.

Nominal Transition Frequency (fT): 180 MHz

High nominal transition frequency indicates fast switching speed and high-frequency performance, making the transistor suitable for demanding applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCP55-16-QF attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

6 pF

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

BCP55-16-QF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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