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NSV60200DMTWTBG

Onsemi

NSV60200DMTWTBG by Onsemi

NSV60200DMTWTBG by Onsemi is a PNP BJT transistor with VCEsat of 0.45V, hFE of 40, and IC of 2A. Ideal for switching applications, it has a max operating temp of 150 °C and collector-emitter voltage of 60V. Suitable for surface mount with small outline package style.

Median Price

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1k+

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Flip Electronics

USA . 9,000 parts In-Stock

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Vyrian

USA . 7,195 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 1,018 parts In-Stock

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$17.750

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QUARKTWIN TECHNOLOGY LTD

USA . 11,769 parts In-Stock

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Kulean Microsystems

USA . 5,180 parts In-Stock

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TANS Electronics

Latvia . 5,078 parts In-Stock

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SupplyDigital Components

Austria . 3,043 parts In-Stock

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Problanco Electronics

Mexico . 2,321 parts In-Stock

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UHIMA Technologies

Türkiye . 413 parts In-Stock

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Corphita

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Corohmni

South Africa . 126 parts In-Stock

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Overview

Discover the powerful capabilities of the Onsemi NSV60200DMTWTBG, a top-of-the-line Power Bipolar Junction Transistor designed for high-performance switching applications. With its superior quality and reliability from a trusted manufacturer like Onsemi, this transistor offers unparalleled value to customers looking for seamless operation and efficiency in their electronic devices. Whether you're building automotive systems or industrial machinery, the NSV60200DMTWTBG guarantees optimal performance, making it an essential component for your next project. Experience the difference with this innovative solution from Onsemi today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection for the transistor, ensuring durability and reliability.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching circuits, making this transistor suitable for a variety of applications.

Configuration: SEPARATE, 2 ELEMENTS

Having separate elements allows for more flexibility in circuit design and better control over the switching operation.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation in such scenarios.

Maximum VCEsat: 0.45 V

Low VCEsat minimizes power loss and improves overall efficiency of the transistor in switching applications.

Surface Mount: YES

Being surface mountable makes it easier for automated manufacturing processes and saves space on the circuit board.

Maximum Power Dissipation (Abs): 2.27 W

High power dissipation capability allows the transistor to handle higher loads without overheating.

Maximum Collector-Emitter Voltage: 60 V

With a high maximum voltage rating, this transistor can handle higher voltage applications reliably.

Nominal Transition Frequency (fT): 155 MHz

High transition frequency enables faster switching speeds, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NSV60200DMTWTBG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Base Capacitance:

18 pF

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1.8 W

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.45 V

Trade Compliance

NSV60200DMTWTBG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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