Loading...

NSV60100DMTWTBG

Onsemi

NSV60100DMTWTBG by Onsemi

NSV60100DMTWTBG by Onsemi is a PNP BJT transistor with VCEsat of 0.3V, hFE of 40, and VCEO of 60V. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and compact small outline package design.

Median Price

$0.388

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 62,700 parts In-Stock

1+ parts

-

100+ parts

$0.406

1k+ parts

$0.337

10k+ parts

$0.301

62,700

-

$0.406

$0.337

$0.301

DigiKey

USA . 2,998 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.370

2,998

-

-

-

$0.370

Flip Electronics (Authorized)

USA . 2,998 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,998

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,846 parts In-Stock

1+ parts

$0.316

100+ parts

-

1k+ parts

-

10k+ parts

-

1,846

$0.316

-

-

-

Vyrian

USA . 937 parts In-Stock

1+ parts

$0.333

100+ parts

-

1k+ parts

-

10k+ parts

-

937

$0.333

-

-

-

ComSIT Distribution GmbH

Germany . 444,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

444,000

-

-

-

-

Flip Electronics

USA . 2,998 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,998

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 612 parts In-Stock

1+ parts

$0.300

100+ parts

-

1k+ parts

-

10k+ parts

-

612

$0.300

-

-

-

Corohmni

South Africa . 53 parts In-Stock

1+ parts

$0.333

100+ parts

-

1k+ parts

-

10k+ parts

-

53

$0.333

-

-

-

Andel Nordic

Denmark . 5,927 parts In-Stock

1+ parts

$1.230

100+ parts

-

1k+ parts

$0.858

10k+ parts

$0.858

5,927

$1.230

-

$0.858

$0.858

Component Stockers USA

USA . 425 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

425

$99.990

-

-

-

Perfect Parts

USA . 23,520 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

23,520

-

-

-

-

TANS Electronics

Latvia . 7,560 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,560

-

-

-

-

Authorized Procurement Solutions

USA . 7,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,000

-

-

-

-

SupplyDigital Components

Austria . 4,963 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,963

-

-

-

-

Problanco Electronics

Mexico . 3,849 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,849

-

-

-

-

Kulean Microsystems

USA . 781 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

781

-

-

-

-

Microchip USA

USA . 412 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

412

-

-

-

-

UHIMA Technologies

Türkiye . 8 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8

-

-

-

-

Overview

The NSV60100DMTWTBG by Onsemi is a top-quality Power Bipolar Junction Transistor (BJT) that offers exceptional performance in switching applications. Manufactured by Onsemi, a trusted name in the industry, this PNP transistor boasts a maximum Collector-Emitter Voltage of 60V and a low Maximum VCEsat of just 0.3V. Its compact square package design and surface mount capability make it easy to integrate into various electronic devices. With a high DC Current Gain of 40 and a maximum Power Dissipation of 1.8W, this transistor delivers reliable and efficient operation. Trust Onsemi's NSV60100DMTWTBG for all your switching needs and experience the superior quality and performance it brings to your applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components of the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications and this specific polarity meets the requirements for the intended use.

Configuration: SEPARATE, 2 ELEMENTS

Having separate elements allows for greater flexibility and functionality in circuit design, making it suitable for more complex applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance when used for this purpose.

Maximum VCEsat: 0.3 V

Low VCEsat minimizes power loss and improves efficiency, making this transistor an energy-efficient choice.

Package Shape: SQUARE

The square package shape allows for easy mounting and efficient use of space on PCBs, ideal for compact electronic devices.

Terminal Form: NO LEAD

No lead terminals simplify the assembly process and reduce the risk of soldering errors, ensuring reliable connections.

Maximum Power Dissipation (Abs): 1.8 W

With a high power dissipation rating, this transistor can handle relatively high power levels without overheating, providing robust performance.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for easy integration into compact electronic designs.

Minimum DC Current Gain (hFE): 40

A minimum hFE of 40 ensures stable and reliable amplification of current in the transistor, making it suitable for various applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, making it suitable for industrial and automotive applications.

Maximum Collector-Base Capacitance: 18 pF

Low collector-base capacitance minimizes the risk of parasitic effects and ensures fast switching speeds, enhancing the performance of the transistor.

Maximum Collector-Emitter Voltage: 60 V

With a high maximum VCE voltage rating, this transistor can handle a wide range of voltages, making it versatile for different applications.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and efficiency, making it a suitable choice for transistor construction.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature allows the transistor to function in extreme cold environments, expanding its range of applications.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1A, this transistor is capable of handling moderate to high current loads, making it versatile for various applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish ensures good solderability and long-term reliability of connections, enhancing the overall durability of the transistor.

Terminal Position: DUAL

Dual terminal positions provide flexibility in circuit layout and allow for easy connection to external components, improving overall design versatility.

Case Connection: COLLECTOR

The case connection at the collector terminal simplifies circuit design and ensures proper heat dissipation, enhancing the overall performance and reliability of the transistor.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum reflow time of 30 seconds, this transistor can withstand reflow soldering processes without damage, ensuring reliable assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260 °C allows for robust soldering processes and ensures durable connections, improving the overall reliability of the transistor.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures reliability and quality, making this transistor suitable for automotive and other demanding applications.

Nominal Transition Frequency (fT): 155 MHz

With a high nominal transition frequency, this transistor can switch at high speeds, making it ideal for applications that require rapid switching and amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NSV60100DMTWTBG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

18 pF

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

NSV60100DMTWTBG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 3