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NSV60201SMTWTBG

Onsemi

NSV60201SMTWTBG by Onsemi

NSV60201SMTWTBG by Onsemi is a NPN BJT transistor for switching applications. It has a max. collector-emitter voltage of 60V, max. collector current of 2A, and min. DC current gain of 35 (hFE). This surface-mount transistor in small outline package is ideal for high-speed switching circuits.

Median Price

$0.229

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,998 parts In-Stock

1+ parts

$0.880

100+ parts

$0.357

1k+ parts

$0.247

10k+ parts

$0.173

2,998

$0.880

$0.357

$0.247

$0.173

Rochester

USA . 20,990 parts In-Stock

1+ parts

-

100+ parts

$0.229

1k+ parts

$0.190

10k+ parts

$0.170

20,990

-

$0.229

$0.190

$0.170

Verical

USA . 20,990 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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$0.211

20,990

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$0.211

Flip Electronics (Authorized)

USA . 18,000 parts In-Stock

1+ parts

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18,000

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Distributors (In-Stock)

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Digiode

USA . 877 parts In-Stock

1+ parts

$0.179

100+ parts

-

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877

$0.179

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Vyrian

USA . 2,231 parts In-Stock

1+ parts

$0.188

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2,231

$0.188

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Flip Electronics

USA . 18,000 parts In-Stock

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18,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 921 parts In-Stock

1+ parts

$0.169

100+ parts

-

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921

$0.169

-

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Corohmni

South Africa . 468 parts In-Stock

1+ parts

$0.188

100+ parts

-

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468

$0.188

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Microchip USA

USA . 2,754 parts In-Stock

1+ parts

$1.307

100+ parts

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2,754

$1.307

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$1.633

100+ parts

$1.617

1k+ parts

$1.551

10k+ parts

-

500

$1.633

$1.617

$1.551

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Continental Prestige Electronics

USA . 21,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.225

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21,000

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$0.225

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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TANS Electronics

Latvia . 7,682 parts In-Stock

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7,682

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Problanco Electronics

Mexico . 7,399 parts In-Stock

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SupplyDigital Components

Austria . 1,825 parts In-Stock

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Kulean Microsystems

USA . 815 parts In-Stock

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815

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UHIMA Technologies

Türkiye . 127 parts In-Stock

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127

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Overview

Experience the superior quality and reliability of the NSV60201SMTWTBG by Onsemi, a leading manufacturer in the power BJT category. Ideal for switching applications, this NPN transistor offers exceptional performance with a maximum collector-emitter voltage of 60V and a collector current of 2A. With a small outline package style and matte tin terminal finish, this transistor provides ease of installation and excellent thermal conductivity. Trust Onsemi's expertise to deliver a product that exceeds expectations, providing value and efficiency to your projects. Choose the NSV60201SMTWTBG for reliable performance and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, ensuring a long lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile for a variety of applications.

Configuration: SINGLE

Simplifies circuit design and wiring by only requiring one transistor for operation.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing efficient and reliable performance in these scenarios.

Surface Mount: YES

Enables easy and secure mounting onto a circuit board, saving space and simplifying the assembly process.

Package Shape: SQUARE

Has a compact shape that allows for efficient use of space on the circuit board.

No. of Terminals: 6

Provides multiple connection points for flexibility in circuit design and functionality.

Minimum DC Current Gain (hFE): 35

Ensures consistent and stable amplification of the input signal.

Maximum Collector-Emitter Voltage: 60 V

Can handle higher voltage levels, making it suitable for a wider range of applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and efficiency in electronic devices.

Maximum Collector Current (IC): 2 A

Capable of handling high currents, making it suitable for power applications.

Terminal Finish: MATTE TIN

Provides a reliable and low-resistance connection for optimal performance.

Terminal Position: DUAL

Allows for versatile mounting options and circuit configurations.

Case Connection: COLLECTOR

Facilitates easy connection to the collector terminal for efficient circuit operation.

Peak Reflow Temperature °C: 260

Can withstand higher temperatures during soldering processes for reliable assembly.

Reference Standard: AEC-Q101

Complies with automotive industry standards, ensuring high quality and reliability for automotive applications.

Nominal Transition Frequency (fT): 180 MHz

Offers high frequency response for fast switching and amplification tasks.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NSV60201SMTWTBG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NSV60201SMTWTBG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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