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BCP5616TQTC

Diodes Incorporated

BCP5616TQTC by Diodes Incorporated

Diodes Inc. BCP5616TQTC is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 40, and IC of 1A. Ideal for small outline SMT designs in automotive and industrial electronics with operating temp range -55 to 150°C.

Median Price

$0.458

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,942 parts In-Stock

1+ parts

$0.830

100+ parts

$0.360

1k+ parts

$0.165

10k+ parts

$0.099

3,942

$0.830

$0.360

$0.165

$0.099

Verical

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.087

8,000

-

-

-

$0.087

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.120

100+ parts

-

1k+ parts

-

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-

300

$0.120

-

-

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Vyrian

USA . 6,285 parts In-Stock

1+ parts

-

100+ parts

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6,285

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VNN

France . 4,207 parts In-Stock

1+ parts

-

100+ parts

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4,207

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 43,975 parts In-Stock

1+ parts

$0.066

100+ parts

-

1k+ parts

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10k+ parts

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43,975

$0.066

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$0.118

100+ parts

-

1k+ parts

$0.113

10k+ parts

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100

$0.118

-

$0.113

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AZTECH Wire

Italy . 1,019 parts In-Stock

1+ parts

$19.880

100+ parts

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1,019

$19.880

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QUARKTWIN TECHNOLOGY LTD

USA . 15,867 parts In-Stock

1+ parts

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15,867

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

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100+ parts

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10,000

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Overview

Experience the unparalleled quality and performance of the BCP5616TQTC by Diodes Incorporated, a leading manufacturer in power Bipolar Junction Transistors. Ideal for switching applications, this NPN transistor offers a low VCEsat and high DC current gain, ensuring efficient operation. With a durable plastic/epoxy package and small outline style, it's easy to mount and delivers maximum power dissipation of 2.5W. Trust Diodes Incorporated for reliable, high-quality components that exceed industry standards. Unlock the potential of your electronic designs with the BCP5616TQTC today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable.

Polarity or Channel Type: NPN

The NPN configuration allows for efficient switching functionality in electronic circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and installation.

Transistor Application: SWITCHING

Designed for switching applications, ensuring reliable performance in various power control systems.

Surface Mount: YES

The surface mount compatibility allows for easy PCB integration and space-saving design.

Maximum VCEsat: 0.5 V

The low maximum VCEsat value contributes to high efficiency and reduced power loss.

Package Shape: RECTANGULAR

The rectangular package shape provides versatility and ease of mounting in different applications.

Terminal Form: GULL WING

The gull wing terminal form offers secure connections and optimal soldering properties.

No. of Terminals: 4

With 4 terminals, this product provides multiple connection options for added flexibility.

Maximum Power Dissipation (Abs): 2.5 W

The high maximum power dissipation ensures reliable operation under varying load conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for compact circuitry designs.

Minimum DC Current Gain (hFE): 40

The minimum DC current gain of 40 ensures consistent amplification in a wide range of applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this product can withstand high-temperature environments.

Maximum Collector-Base Capacitance: 25 pF

The low collector-base capacitance minimizes signal distortion and improves overall circuit performance.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage rating ensures voltage protection and reliability in demanding conditions.

Transistor Element Material: SILICON

The silicon transistor element material provides high performance and reliability in various electronic applications.

Minimum Operating Temperature: -55 °C

With a minimum operating temperature of -55°C, this product is suitable for use in extreme cold environments.

Maximum Collector Current (IC): 1 A

The high maximum collector current rating allows for efficient power handling and reliability in demanding applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent solderability and long-lasting connections.

Terminal Position: DUAL

The dual terminal position offers flexibility in installation and connection options.

Case Connection: COLLECTOR

The case connection at the collector terminal ensures secure grounding and improved circuit stability.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C allows for reliable soldering during assembly processes.

Reference Standard: AEC-Q101; IATF 16949; MIL-STD-202

Conforms to industry standards for quality and reliability in automotive and military applications.

Nominal Transition Frequency (fT): 150 MHz

The high nominal transition frequency enables fast switching speeds and precise signal amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCP5616TQTC attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

25 pF

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IATF 16949; MIL-STD-202

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

BCP5616TQTC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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