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BCP5616TTA

Diodes Incorporated

BCP5616TTA by Diodes Incorporated

Diodes Inc. BCP5616TTA is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 40, and IC of 1A. Ideal for small outline packages in surface mount designs with operating temperatures up to 150°C.

Median Price

$0.298

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 25 parts In-Stock

1+ parts

$0.428

100+ parts

$0.155

1k+ parts

$0.129

10k+ parts

-

25

$0.428

$0.155

$0.129

-

DigiKey

USA . 366 parts In-Stock

1+ parts

$0.450

100+ parts

$0.176

1k+ parts

$0.117

10k+ parts

$0.084

366

$0.450

$0.176

$0.117

$0.084

Verical

USA . 46,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.047

46,000

-

-

-

$0.047

RS (Exports)

UK . 2,775 parts In-Stock

1+ parts

-

100+ parts

$0.168

1k+ parts

$0.138

10k+ parts

-

2,775

-

$0.168

$0.138

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.091

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$0.091

-

-

-

Vyrian

USA . 6,871 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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6,871

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-

-

VNN

France . 700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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700

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-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 12,089 parts In-Stock

1+ parts

$0.040

100+ parts

-

1k+ parts

-

10k+ parts

-

12,089

$0.040

-

-

-

Argo Parts USA

USA . 3,206 parts In-Stock

1+ parts

$0.091

100+ parts

-

1k+ parts

-

10k+ parts

$0.088

3,206

$0.091

-

-

$0.088

Continental Prestige Electronics

USA . 25 parts In-Stock

1+ parts

$0.323

100+ parts

$0.139

1k+ parts

$0.055

10k+ parts

$0.049

25

$0.323

$0.139

$0.055

$0.049

Corohmni

South Africa . 1,045 parts In-Stock

1+ parts

$0.921

100+ parts

-

1k+ parts

-

10k+ parts

-

1,045

$0.921

-

-

-

Aztec Data Supply Inc.

USA . 4,324 parts In-Stock

1+ parts

$1.020

100+ parts

-

1k+ parts

-

10k+ parts

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4,324

$1.020

-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 14,980 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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14,980

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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10,000

-

-

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$0.089

1k+ parts

$0.086

10k+ parts

$0.085

1,000

-

$0.089

$0.086

$0.085

Eastek

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.061

10k+ parts

-

1,000

-

-

$0.061

-

Overview

Enhance your power management systems with the BCP5616TTA by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-notch quality and performance. This Power Bipolar Junction Transistor (BJT) offers reliable switching capabilities, making it ideal for a wide range of applications. With a low VCEsat of 0.5V and a maximum collector-emitter voltage of 80V, this transistor provides exceptional value and efficiency. Upgrade your electronic devices today with the BCP5616TTA and experience the benefits of high-quality components tailored to meet your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and amplifiers, providing good performance and versatility.

Configuration: SINGLE

Simplified design with a single transistor, making it easier to implement and troubleshoot in circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation in such scenarios.

Surface Mount: YES

Surface mount capability makes it easier to mount and integrate the transistor onto circuit boards, saving space and enabling automated assembly processes.

Maximum VCEsat: 0.5 V

Low VCEsat voltage results in minimal power loss and high efficiency in switching operations.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and orientation on PCBs, facilitating efficient circuit layout.

No. of Terminals: 4

Having 4 terminals enables versatile connections and configurations in circuits, increasing functionality and compatibility.

Maximum Power Dissipation (Abs): 2.5 W

High power dissipation capability ensures the transistor can handle demanding applications without overheating or failure.

Package Style (Meter): SMALL OUTLINE

Small outline package size saves space on PCBs and allows for compact designs, ideal for applications with size constraints.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures reliable amplification and switching performance in various circuit configurations.

Maximum Operating Temperature: 150 °C

High operating temperature range allows the transistor to withstand harsh environmental conditions and extended operation without performance degradation.

Maximum Collector-Base Capacitance: 25 pF

Low capacitance minimizes signal distortion and interference, ensuring accurate and efficient switching performance.

Maximum Collector-Emitter Voltage: 80 V

High collector-emitter voltage rating provides flexibility for use in diverse circuits and applications that require varying voltage levels.

Transistor Element Material: SILICON

Silicon material offers high-performance characteristics, reliability, and compatibility with modern electronic systems.

Minimum Operating Temperature: -55 °C

Low operating temperature range enables the transistor to function in cold environments without performance issues or damage.

Maximum Collector Current (IC): 1 A

High collector current rating allows the transistor to handle significant current loads, making it suitable for power switching applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and conductivity for reliable connections during assembly and operation.

Terminal Position: DUAL

Dual terminal position enables versatile mounting and connection options, enhancing the transistor's usability in different circuit layouts.

Case Connection: COLLECTOR

Case connection at the collector facilitates efficient heat dissipation and electrical isolation, enhancing the transistor's overall performance and reliability.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures reliable solder joints and assembly processes, maintaining the quality and durability of the transistor in manufacturing.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency allows for fast switching speeds and amplification capabilities, making the transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCP5616TTA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

25 pF

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

BCP5616TTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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