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KSC1173YTSTUA

Onsemi

KSC1173YTSTUA by Onsemi

KSC1173YTSTUA by Onsemi is a NPN BJT transistor with max VCEsat of 0.8V, hFE of 120, and IC of 3A. Ideal for amplifier applications, it has a max operating temp of 150 °C and collector-emitter voltage of 30V. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$0.081

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 31,533 parts In-Stock

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$0.081

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$0.067

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$0.060

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$0.081

$0.067

$0.060

Verical

USA . 31,533 parts In-Stock

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$0.074

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$0.074

DigiKey

USA . 995 parts In-Stock

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$2.520

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995

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$2.520

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Flip Electronics (Authorized)

USA . 995 parts In-Stock

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995

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Digiode

USA . 482 parts In-Stock

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$0.063

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Vyrian

USA . 5,398 parts In-Stock

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Bristol Electronics

USA . 4,000 parts In-Stock

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Dan-Mar Components

USA . 4,000 parts In-Stock

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Flip Electronics

USA . 995 parts In-Stock

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Corphita

USA . 786 parts In-Stock

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$0.059

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786

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Corohmni

South Africa . 366 parts In-Stock

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$0.066

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Component Stockers USA

USA . 773 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 13,086 parts In-Stock

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Problanco Electronics

Mexico . 7,637 parts In-Stock

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TANS Electronics

Latvia . 7,464 parts In-Stock

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SupplyDigital Components

Austria . 6,189 parts In-Stock

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 781 parts In-Stock

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Overview

Enhance your amplifier projects with the KSC1173YTSTUA Power BJT by Onsemi. Crafted with precision and top-notch quality, this NPN transistor offers reliable performance and durability for your electronic applications. Whether you're a DIY enthusiast or a professional in need of a dependable component, this transistor's 10W power dissipation, high DC current gain of 120, and maximum operating temperature of 150 °C ensure optimal functionality. Say goodbye to subpar performance and hello to superior results with the KSC1173YTSTUA - your go-to choice for all your amplifier needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and switching circuits, providing high performance in these applications.

Configuration: SINGLE

Single configuration simplifies circuit design and ensures easy integration in electronic devices.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying signals.

Maximum VCEsat: 0.8 V

Low saturation voltage reduces power loss and improves efficiency in amplifier circuits.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and positioning in circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during assembly.

Maximum Power Dissipation (Abs): 10 W

High power dissipation capability allows the transistor to handle larger loads and ensures reliability in operation.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for easy installation and heat dissipation in electronic devices.

Minimum DC Current Gain (hFE): 120

High DC current gain ensures stable and reliable amplification of signals in the circuit.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in various environmental conditions without compromising performance.

Maximum Collector-Base Capacitance: 35 pF

Low collector-base capacitance ensures minimal signal distortion and high-frequency response in amplifier circuits.

Maximum Collector-Emitter Voltage: 30 V

High collector-emitter voltage rating allows the transistor to handle higher voltage applications with ease.

Transistor Element Material: SILICON

Silicon material ensures high performance, reliability, and stability in amplification applications.

Maximum Collector Current (IC): 3 A

High collector current rating allows the transistor to handle higher current loads without overheating.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides corrosion resistance and reliable conductivity in terminal connections.

Terminal Position: SINGLE

Single terminal positioning simplifies circuit design and ensures proper connections in the application.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for fast switching speeds and improved performance in amplifier circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSC1173YTSTUA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Base Capacitance:

35 pF

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

120

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.8 V

Trade Compliance

KSC1173YTSTUA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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