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KSC1173Y

Onsemi

KSC1173Y by Onsemi

KSC1173Y by Onsemi is a NPN Power BJT with hFE of 120, VCE of 30V, and IC of 3A. Ideal for amplifier applications due to its silicon material and fT of 100MHz. It comes in a rectangular package with flange mount style and through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,388 parts In-Stock

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Digiode

USA . 1,647 parts In-Stock

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SupplyDigital Components

Austria . 7,668 parts In-Stock

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Kulean Microsystems

USA . 6,955 parts In-Stock

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TANS Electronics

Latvia . 6,787 parts In-Stock

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Corphita

USA . 2,731 parts In-Stock

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Problanco Electronics

Mexico . 2,389 parts In-Stock

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Supply Digital

USA . 1,028 parts In-Stock

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UHIMA Technologies

Türkiye . 881 parts In-Stock

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Corohmni

South Africa . 435 parts In-Stock

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Overview

Unlock the power of quality with the KSC1173Y by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch Power Bipolar Junction Transistors that guarantee reliability and performance. Ideal for amplifier applications, this NPN transistor offers a maximum collector-emitter voltage of 30 V and a nominal transition frequency of 100 MHz, providing customers with the value and benefits they need to succeed. Trust Onsemi for all your transistor needs and experience the advantages of superior quality and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material ensures lightweight and durable construction, making the transistor easy to handle and install.

Polarity or Channel Type: NPN

NPN type transistor allows for easy integration and compatibility with other NPN components in a circuit.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity, making the transistor ideal for basic amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and efficiency in amplifying signals.

Package Shape: RECTANGULAR

Rectangular shape provides easy mounting and alignment within circuits, optimizing space utilization.

Terminal Form: THROUGH-HOLE

Through-hole terminals ensure secure and reliable connections, minimizing the risk of disconnections or faulty connections.

No. of Terminals: 3

Three terminals provide the necessary connections for power input, output, and control signals, facilitating proper functioning of the transistor within a circuit.

Package Style (Meter): FLANGE MOUNT

Flange mount style offers stable mounting and mechanical support, enhancing the overall durability and longevity of the transistor.

Minimum DC Current Gain (hFE): 120

High DC current gain ensures efficient signal amplification and reliable performance in amplifier circuits.

Maximum Collector-Emitter Voltage: 30 V

With a maximum voltage rating of 30 V, the transistor can safely handle a wide range of voltage inputs, increasing its versatility in different applications.

Transistor Element Material: SILICON

Silicon material offers excellent thermal stability and low leakage current, enhancing the reliability and performance of the transistor.

Maximum Collector Current (IC): 3 A

High collector current rating of 3 A allows the transistor to handle higher power loads without overheating or breakdown, ensuring reliable operation.

Terminal Position: SINGLE

Single terminal position simplifies the connection process and reduces the risk of errors during installation, enhancing the overall usability of the transistor.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency of 100 MHz enables fast switching speeds and high-frequency operation, making the transistor suitable for a wide range of amplifier applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSC1173Y attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

120

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSC1173Y Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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