Loading...

KSC1173O

Onsemi

KSC1173O by Onsemi

KSC1173O by Onsemi is a NPN Power BJT with 70 min hFE and 30V max VCE. Ideal for amplifier applications, it has a 3A max IC and operates at 100MHz fT. The transistor comes in a plastic/epoxy package with flange mount style and through-hole terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,377 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,377

-

-

-

-

Digiode

USA . 1,639 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,639

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TANS Electronics

Latvia . 7,301 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,301

-

-

-

-

SupplyDigital Components

Austria . 4,622 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,622

-

-

-

-

Kulean Microsystems

USA . 2,889 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,889

-

-

-

-

Supply Digital

USA . 1,799 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,799

-

-

-

-

Corphita

USA . 1,443 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,443

-

-

-

-

UHIMA Technologies

Türkiye . 596 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

596

-

-

-

-

Problanco Electronics

Mexico . 535 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

535

-

-

-

-

Corohmni

South Africa . 177 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

177

-

-

-

-

Overview

Unlock the power of innovation with the KSC1173O by Onsemi, a high-quality Power BJT transistor designed for amplifier applications. Manufactured by industry leader Onsemi, this NPN transistor offers exceptional performance and reliability, making it perfect for a wide range of electronic projects. With a maximum collector current of 3A and a transition frequency of 100MHz, this transistor provides unbeatable value and benefits to customers looking for superior quality components. Trust Onsemi and elevate your creations with the KSC1173O.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and switching circuits, making this transistor suitable for a variety of applications.

Configuration: SINGLE

Simplifies circuit design and makes it easier to integrate into a system.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimal performance in amplifier circuits.

Package Shape: RECTANGULAR

Allows for easy mounting and integration into electronic devices.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and installation onto a PCB.

No. of Terminals: 3

Simple 3-terminal design for easy connection in circuits.

Package Style (Meter): FLANGE MOUNT

Enables secure mounting and heat dissipation, enhancing the overall reliability of the transistor.

Minimum DC Current Gain (hFE): 70

Provides consistent and reliable amplification of signals.

Maximum Collector-Emitter Voltage: 30 V

Suitable for low to medium voltage applications, ensuring safe operation within specified limits.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability in various operating conditions.

Maximum Collector Current (IC): 3 A

Capable of handling moderate current loads, making it suitable for a wide range of applications.

Terminal Position: SINGLE

Simplifies connection and facilitates circuit design.

Nominal Transition Frequency (fT): 100 MHz

Suitable for high-frequency applications, ensuring fast and efficient signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSC1173O attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

70

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSC1173O Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20