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BD244CTU

Onsemi

BD244CTU by Onsemi

The Onsemi BD244CTU is a PNP BJT transistor with max VCEsat of 1.5V, IC of 6A, and hFE of 15. Ideal for switching applications, it operates b/w -65 to 150°C with a max VCE of 100V. Its package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$0.362

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 4,059 parts In-Stock

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-

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$0.320

4,059

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$0.320

Flip Electronics (Authorized)

USA . 4,059 parts In-Stock

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4,059

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Rochester

USA . 200 parts In-Stock

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100+ parts

$0.403

1k+ parts

$0.334

10k+ parts

$0.298

200

-

$0.403

$0.334

$0.298

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.458

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150

$0.458

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Digiode

USA . 1,853 parts In-Stock

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$0.469

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1,853

$0.469

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Vyrian

USA . 8,517 parts In-Stock

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8,517

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Flip Electronics

USA . 4,059 parts In-Stock

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VNN

France . 1,178 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,784 parts In-Stock

1+ parts

$0.420

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1,784

$0.420

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Corphita

USA . 982 parts In-Stock

1+ parts

$0.445

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982

$0.445

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Corohmni

South Africa . 474 parts In-Stock

1+ parts

$0.449

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474

$0.449

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Bastille Electronics

Australia . 192 parts In-Stock

1+ parts

$0.458

100+ parts

$0.435

1k+ parts

$0.413

10k+ parts

$0.408

192

$0.458

$0.435

$0.413

$0.408

AZTECH Wire

Italy . 1,121 parts In-Stock

1+ parts

$20.600

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$20.600

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Kulean Microsystems

USA . 6,372 parts In-Stock

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6,372

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Alle Elektronik GmbH

Germany . 3,260 parts In-Stock

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Perfect Parts

USA . 2,240 parts In-Stock

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SupplyDigital Components

Austria . 2,100 parts In-Stock

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2,100

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Kepictronics

USA . 2,000 parts In-Stock

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UHIMA Technologies

Türkiye . 678 parts In-Stock

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678

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TANS Electronics

Latvia . 522 parts In-Stock

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522

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Problanco Electronics

Mexico . 414 parts In-Stock

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414

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Overview

Unleash the power of innovation with the Onsemi BD244CTU Power Bipolar Junction Transistor. As a trusted manufacturer in the industry, Onsemi delivers top-quality products that surpass expectations. Ideal for switching applications, this PNP transistor offers reliable performance and efficiency. With a maximum VCEsat of 1.5V and a maximum collector current of 6A, this transistor provides exceptional value and benefits to customers. Whether you're working on DIY projects or professional applications, the BD244CTU is the perfect choice for your power needs. Experience the difference with Onsemi today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, ideal for various applications.

Polarity or Channel Type: PNP

The PNP polarity allows the transistor to operate with positive voltage, making it suitable for circuit designs that require this type of configuration.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces the overall footprint, making it easier to integrate into various electronic systems.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast response times and efficient performance in controlling electrical signals.

Maximum VCEsat: 1.5 V

The low VCEsat of 1.5 V helps minimize power losses and enhances the efficiency of the transistor in switching operations.

Package Shape: RECTANGULAR

The rectangular shape provides a compact form factor, allowing for easy mounting and installation in tight spaces.

Terminal Form: THROUGH-HOLE

The through-hole terminals offer secure connections and ease of soldering, ensuring reliable performance in various environments.

No. of Terminals: 3

With 3 terminals, this transistor offers flexibility in circuit connections and allows for a range of configurations to suit different applications.

Maximum Power Dissipation (Abs): 65 W

The high power dissipation capability of 65 W enables the transistor to handle high power levels without overheating, ensuring long-term reliability.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides sturdy mounting options, making it suitable for heavy-duty applications that require secure attachment.

Minimum DC Current Gain (hFE): 15

The minimum DC current gain of 15 ensures consistent amplification of signals, maintaining stable performance in various operating conditions.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, the transistor can withstand elevated temperatures, making it suitable for demanding industrial environments.

Maximum Collector-Emitter Voltage: 100 V

The high collector-emitter voltage rating of 100 V allows the transistor to handle high voltage levels, ensuring reliable performance in a wide range of applications.

Transistor Element Material: SILICON

Made of silicon, this transistor offers excellent thermal conductivity and electrical properties, resulting in reliable and efficient operation.

Minimum Operating Temperature: -65 °C

With a minimum operating temperature of -65°C, the transistor can function effectively in cold environments, expanding its suitability for a variety of applications.

Maximum Collector Current (IC): 6 A

The high maximum collector current rating of 6 A enables the transistor to handle large currents, making it suitable for high-power applications.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides corrosion resistance and improved solderability, ensuring secure and long-lasting connections in various operating conditions.

Terminal Position: SINGLE

The single terminal position simplifies installation and enhances the ease of connection, making it convenient to integrate the transistor into electronic circuits.

Case Connection: COLLECTOR

The collector case connection allows for efficient heat dissipation, ensuring the transistor remains cool during operation, improving overall performance and longevity.

Nominal Transition Frequency (fT): 3 MHz

With a nominal transition frequency of 3 MHz, the transistor offers high-speed switching capabilities, making it suitable for applications that require fast response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD244CTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1.5 V

Trade Compliance

BD244CTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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