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2N2222AUATXV

Tt Electronics Plc

2N2222AUATXV by Tt Electronics Plc

2N2222AUATXV by Tt Electronics Plc is a NPN BJT transistor with VCEsat of 1V, hFE of 100, and IC of 0.8A. Ideal for switching applications, it has a max operating temp of 200°C and TOFF of 300ns. Its small outline package makes it suitable for various electronic designs.

Median Price

$24.180

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$24.180

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50

$24.180

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Vyrian

USA . 7,255 parts In-Stock

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VNN

France . 485 parts In-Stock

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485

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 2,088 parts In-Stock

1+ parts

$0.628

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2,088

$0.628

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Advanced Electronics

New Zealand . 270 parts In-Stock

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$0.951

100+ parts

$0.903

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$0.903

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270

$0.951

$0.903

$0.903

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Corohmni

South Africa . 20 parts In-Stock

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$1.384

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20

$1.384

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Ampacity Inc.

Singapore . 1,045 parts In-Stock

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$11.050

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1,045

$11.050

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AZTECH Wire

Italy . 532 parts In-Stock

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$12.152

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532

$12.152

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Continental Prestige Electronics

USA . 6,027 parts In-Stock

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$24.180

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$23.696

6,027

$24.180

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$23.696

Argo Parts USA

USA . 3,428 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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$23.696

1k+ parts

$22.971

10k+ parts

$22.487

500

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$23.696

$22.971

$22.487

Overview

Upgrade your electronic projects with the high-quality 2N2222AUATXV Power Bipolar Junction Transistor by Tt Electronics Plc. This NPN transistor is perfect for switching applications, offering a maximum VCEsat of just 1V and a minimum DC current gain of 100. With a maximum collector-emitter voltage of 50V and a compact rectangular package shape, this transistor is ideal for a wide range of applications. Trust in Tt Electronics Plc's expertise in manufacturing top-of-the-line components and experience the value and benefits that the 2N2222AUATXV brings to your designs.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material ensures good thermal conductivity and durability, making the transistor suitable for high-power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for switching applications due to their high current and voltage capabilities.

Maximum VCEsat: 1 V

Low VCEsat helps in reducing power dissipation and improving efficiency in switching operations.

Surface Mount: YES

Surface mount packaging allows for easy and compact integration onto PCBs, saving space and reducing assembly time.

Maximum Power Dissipation (Abs): 1.16 W

With a high maximum power dissipation, this transistor can handle power spikes without getting damaged.

Minimum DC Current Gain (hFE): 100

A high DC current gain ensures proper amplification and reliable switching performance.

Maximum Operating Temperature: 200 °C

The transistor can operate efficiently in high-temperature environments, increasing its reliability in various applications.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating allows the transistor to handle higher voltages without breakdown.

Maximum Turn On Time (ton): 35 ns

Fast turn-on time ensures quick switching speed, making the transistor suitable for high-frequency applications.

Maximum Collector Current (IC): 0.8 A

With a high maximum collector current rating, this transistor can handle relatively high currents, ideal for power switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N2222AUATXV attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Tt Electronics Plc

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

8 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-CDSO-N4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.5 W

Maximum Power Dissipation (Abs):

Reference Standard:

MIL-19500

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

35 ns

Maximum VCEsat:

1 V

Trade Compliance

2N2222AUATXV Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

Tt Electronics Plc

Our primary focus areas for growth and investment are in the end markets of healthcare, aerospace & defence, and automation & electrification which includes products that address resource scarcity, improve energy efficiency, support renewables and drive productivity, connectivity and health.

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