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BCP56-16T-QF

Nexperia

BCP56-16T-QF by Nexperia

BCP56-16T-QF by Nexperia is a NPN Power BJT for switching applications. It features a max VCEsat of 0.5V, hFE of 63, and can handle a max IC of 1A. With a small outline package style and peak reflow temperature of 260°C, it meets AEC-Q101 and IEC-60134 standards for automotive use.

Median Price

$0.048

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 52,000 parts In-Stock

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$0.048

52,000

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$0.048

EBV Elektronik

Germany . 8,000 parts In-Stock

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8,000

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Distributors (In-Stock)

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Nova Conductors

Japan . 200 parts In-Stock

1+ parts

$0.101

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200

$0.101

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IBS Electronics

USA . 3,214 parts In-Stock

1+ parts

$0.319

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3,214

$0.319

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Chip Stock

USA . 51,000 parts In-Stock

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51,000

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VNN

France . 2,899 parts In-Stock

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2,899

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Vyrian

USA . 2,393 parts In-Stock

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2,393

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Distributors (Availability)

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Ampacity Inc.

Singapore . 109,787 parts In-Stock

1+ parts

$0.078

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109,787

$0.078

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Aranea Global

USA . 50 parts In-Stock

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$0.099

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$0.095

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50

$0.099

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$0.095

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Microchip USA

USA . 13,226 parts In-Stock

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$0.472

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13,226

$0.472

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AZTECH Wire

Italy . 11,968 parts In-Stock

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$15.960

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$15.960

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Glotronic Ltd.

UK . 73,600 parts In-Stock

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73,600

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Eastek

USA . 12,000 parts In-Stock

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GreenTree Electronics

Israel . 12,000 parts In-Stock

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12,000

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Supply Digital

USA . 1,589 parts In-Stock

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1,589

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Overview

Experience the next level of power with the BCP56-16T-QF by Nexperia. As a leading manufacturer in the industry, Nexperia delivers top-quality Power Bipolar Junction Transistors (BJT) that are perfect for a variety of switching applications. With a maximum VCEsat of only 0.5V and a minimum DC Current Gain of 63, this NPN transistor offers unmatched performance and reliability. Whether you're looking to optimize your power supply or improve your circuit design, the BCP56-16T-QF provides exceptional value and efficiency. Upgrade your projects today with Nexperia's superior technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering reliable performance.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to incorporate into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable control of current flow.

Surface Mount: YES

Enables easy and space-efficient mounting on circuit boards, ideal for compact electronic devices.

Maximum VCEsat: 0.5 V

Low VCEsat indicates minimal voltage drop across the transistor when conducting, leading to high efficiency.

Package Shape: RECTANGULAR

Compact rectangular shape facilitates easy placement on circuit boards, optimizing use of space.

No. of Terminals: 4

Easy to connect and integrate into circuit designs, simplifying the overall assembly process.

Maximum Power Dissipation (Abs): 1.8 W

Capable of handling higher power levels, making it suitable for a wide range of applications.

Package Style (Meter): SMALL OUTLINE

Compact small outline package saves space and allows for high-density circuit designs.

Minimum DC Current Gain (hFE): 63

Consistent and reliable current gain ensures stable performance in various operating conditions.

Maximum Operating Temperature: 150 °C

Can operate efficiently at elevated temperatures, enhancing overall reliability and performance.

Maximum Collector-Base Capacitance: 4.5 pF

Low capacitance minimizes signal distortion and ensures fast switching speeds in high-frequency applications.

Maximum Collector-Emitter Voltage: 80 V

High voltage rating allows for use in a wide range of circuit designs, providing flexibility and versatility.

Transistor Element Material: SILICON

Silicon transistors offer superior performance and reliability compared to other materials, ensuring long-term stability.

Minimum Operating Temperature: -55 °C

Capable of operating in extreme cold temperatures, making it suitable for a variety of environmental conditions.

Maximum Collector Current (IC): 1 A

Able to handle high current loads, providing flexibility and reliability in demanding circuit applications.

Terminal Finish: TIN

Tin finish on terminals ensures good solderability and conductivity for reliable connections in circuit assemblies.

Terminal Position: DUAL

Dual terminal configuration offers flexibility in circuit design and allows for easy connections to other components.

Case Connection: COLLECTOR

Collector case connection simplifies circuit layout and improves overall thermal performance, increasing reliability.

Nominal Transition Frequency (fT): 155 MHz

High transition frequency enables fast switching speeds and excellent high-frequency performance in electronic circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCP56-16T-QF attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

4.5 pF

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

63

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

BCP56-16T-QF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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