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BCP5616TTC

Diodes Incorporated

BCP5616TTC by Diodes Incorporated

Diodes Inc. BCP5616TTC is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 40, and IC of 1A. Ideal for small outline packages in surface mount configurations with a max operating temp of 150°C.

Median Price

$0.120

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Avnet

USA . 4,000 parts In-Stock

1+ parts

-

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4,000

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Verical

USA . 4,000 parts In-Stock

1+ parts

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$0.074

4,000

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$0.074

RS (Exports)

UK . 4,000 parts In-Stock

1+ parts

-

100+ parts

$0.165

1k+ parts

$0.164

10k+ parts

$0.158

4,000

-

$0.165

$0.164

$0.158

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.092

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10

$0.092

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Vyrian

USA . 6,486 parts In-Stock

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6,486

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VNN

France . 4,826 parts In-Stock

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4,826

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NAC Semi

USA . 4,000 parts In-Stock

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4,000

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TME

Poland . 4,000 parts In-Stock

1+ parts

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$0.067

4,000

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$0.067

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 14,556 parts In-Stock

1+ parts

$0.040

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14,556

$0.040

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Continental Prestige Electronics

USA . 5,937 parts In-Stock

1+ parts

$0.092

100+ parts

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$0.090

5,937

$0.092

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$0.090

Argo Parts USA

USA . 4,116 parts In-Stock

1+ parts

$0.092

100+ parts

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$0.089

4,116

$0.092

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$0.089

Corohmni

South Africa . 68 parts In-Stock

1+ parts

$1.261

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68

$1.261

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Aztec Data Supply Inc.

USA . 1,438 parts In-Stock

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$1.360

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1,438

$1.360

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AZTECH Wire

Italy . 343 parts In-Stock

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$13.530

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343

$13.530

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QUARKTWIN TECHNOLOGY LTD

USA . 7,910 parts In-Stock

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7,910

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Eastek

USA . 4,000 parts In-Stock

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4,000

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GreenTree Electronics

Israel . 4,000 parts In-Stock

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4,000

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

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$0.090

1k+ parts

$0.087

10k+ parts

$0.086

1,000

-

$0.090

$0.087

$0.086

Overview

Experience performance and reliability like never before with the BCP5616TTC from Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-notch quality and precision engineering in every product. This Power Bipolar Junction Transistor (BJT) is perfect for switching applications, offering a maximum VCEsat of 0.5V and a maximum collector-emitter voltage of 80V. With a small outline package style and dual terminal position, this NPN transistor is ideal for a wide range of electronic projects. Trust Diodes Incorporated to deliver unparalleled value and innovation with the BCP5616TTC.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection to the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in switching applications, offering good amplification and low noise characteristics.

Configuration: SINGLE

A single configuration simplifies the circuit design and makes it easier to implement in different electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in controlling power flows.

Surface Mount: YES

The surface mount capability allows for easy and secure mounting on circuit boards, saving space and facilitating automated assembly processes.

Maximum VCEsat: 0.5 V

Low VCEsat minimizes power loss and improves efficiency in switching operations.

Package Shape: RECTANGULAR

Rectangular shape provides a standardized form factor for easy integration into various electronic designs.

Terminal Form: GULL WING

Gull wing terminals offer secure connections and facilitate efficient heat dissipation for improved performance.

No. of Terminals: 4

The 4 terminals allow for easy connectivity and integration within circuits, enhancing versatility in electronic applications.

Maximum Power Dissipation (Abs): 2.5 W

With a maximum power dissipation of 2.5W, this transistor can handle high power levels without compromising performance.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and makes the transistor suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 40

The minimum DC current gain of 40 ensures reliable amplification and signal processing capabilities.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperature environments.

Maximum Collector-Base Capacitance: 25 pF

Low collector-base capacitance minimizes the risk of signal distortion and improves overall performance in high-frequency applications.

Maximum Collector-Emitter Voltage: 80 V

The high collector-emitter voltage rating of 80V allows for reliable operation in various voltage conditions.

Transistor Element Material: SILICON

Silicon material ensures high performance, reliability, and efficiency in electronic circuits.

Minimum Operating Temperature: -55 °C

With a minimum operating temperature of -55°C, this transistor can function effectively in extreme cold environments.

Maximum Collector Current (IC): 1 A

The maximum collector current rating of 1A ensures that the transistor can handle high current loads efficiently.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and ensures reliable electrical connections in the circuit.

Terminal Position: DUAL

Dual terminal positioning simplifies circuit board layout and enhances connectivity options in electronic applications.

Case Connection: COLLECTOR

The collector case connection simplifies circuit design and ensures efficient heat dissipation for improved performance.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can withstand high-temperature soldering processes during assembly.

Nominal Transition Frequency (fT): 150 MHz

A high nominal transition frequency of 150MHz enables fast switching speeds and high-frequency performance in electronic circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCP5616TTC attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

25 pF

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

BCP5616TTC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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