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MJE802G

Onsemi

MJE802G by Onsemi

MJE802G by Onsemi is a NPN BJT with 40W power dissipation, 80V max collector-emitter voltage, and 4A max collector current. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor. With hFE of 750 and fT of 1MHz, this transistor operates at up to 150 °C in a rectangular package with matte tin finish.

Median Price

$0.263

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Chip Stock

USA . 32,500 parts In-Stock

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USA . 6,500 parts In-Stock

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Vyrian

USA . 5,188 parts In-Stock

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Digiode

USA . 828 parts In-Stock

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Euro-Tech

UK . 612 parts In-Stock

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Component Sense

UK . 106 parts In-Stock

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4 Star Electronics, Inc.

USA . 55 parts In-Stock

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Prism Electronics

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Corohmni

South Africa . 409 parts In-Stock

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AZTECH Wire

Italy . 620 parts In-Stock

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$10.760

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Kepictronics

USA . 28,250 parts In-Stock

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Perfect Parts

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Lixinc

USA . 12,780 parts In-Stock

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SupplyDigital Components

Austria . 4,692 parts In-Stock

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Problanco Electronics

Mexico . 4,485 parts In-Stock

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Metaverse IC Inc.

Canada . 2,700 parts In-Stock

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TANS Electronics

Latvia . 1,651 parts In-Stock

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Kulean Microsystems

USA . 1,146 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 923 parts In-Stock

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Overview

Unlock the power of innovation with the MJE802G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality products that exceed expectations. The MJE802G falls under the category of Power Bipolar Junction Transistors, ideal for amplifier applications. With a maximum power dissipation of 40W and a high DC current gain of 750, this transistor offers unmatched performance and reliability. Experience the benefits of this NPN Darlington transistor with built-in diode and resistor, providing customers with exceptional value and versatility for their projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering high efficiency and low noise performance.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration allows for high current gain and the built-in diode and resistor add protection and convenience to the application.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and reliability in amplification tasks.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration and mounting in various circuits and systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical support and easy soldering for secure connections.

Maximum Power Dissipation (Abs): 40 W

High power dissipation capability allows for handling larger loads and operating at higher power levels without overheating.

Maximum Collector-Emitter Voltage: 80 V

The high maximum voltage rating ensures reliable operation and protection against voltage spikes in the circuit.

Maximum Collector Current (IC): 4 A

Capable of handling high current levels, making it suitable for a wide range of applications that require higher currents.

Minimum DC Current Gain (hFE): 750

High DC current gain ensures efficient amplification and signal processing with minimal input current.

Nominal Transition Frequency (fT): 1 MHz

The high nominal transition frequency allows for fast switching and response times in amplifier applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE802G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-225

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE802G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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