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MJE800G

Onsemi

MJE800G by Onsemi

MJE800G by Onsemi is a NPN power BJT with 40W Pd, 750 hFE, and 60V Vce. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals. Operating up to 150°C, it has a max collector current of 4A and transition frequency of 1MHz.

Median Price

$0.422

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,528 parts In-Stock

1+ parts

$0.258

100+ parts

$0.242

1k+ parts

$0.219

10k+ parts

-

2,528

$0.258

$0.242

$0.219

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Farnell

UK . 2,528 parts In-Stock

1+ parts

$0.586

100+ parts

$0.563

1k+ parts

$0.551

10k+ parts

-

2,528

$0.586

$0.563

$0.551

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,440 parts In-Stock

1+ parts

$0.245

100+ parts

-

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2,440

$0.245

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Nova Conductors

Japan . 26 parts In-Stock

1+ parts

$0.306

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26

$0.306

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Chip Stock

USA . 19,500 parts In-Stock

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19,500

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Vyrian

USA . 7,327 parts In-Stock

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7,327

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Bristol Electronics

USA . 2,980 parts In-Stock

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2,980

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DigiKey Marketplace

USA . 2,528 parts In-Stock

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2,528

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ComSIT Distribution GmbH

Germany . 610 parts In-Stock

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610

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ComSIT USA

USA . 610 parts In-Stock

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610

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ACDS - Activité Composants Distribution Service

France . 480 parts In-Stock

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480

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Mil-Aero Solutions, Inc.

USA . 100 parts In-Stock

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100

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Semi Source

USA . 99 parts In-Stock

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99

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Distributors (Availability)

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Ampacity Inc.

Singapore . 2,210 parts In-Stock

1+ parts

$0.219

100+ parts

-

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2,210

$0.219

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Corphita

USA . 725 parts In-Stock

1+ parts

$0.232

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725

$0.232

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Component Stockers USA

USA . 3,486 parts In-Stock

1+ parts

$0.250

100+ parts

$0.240

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$0.220

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3,486

$0.250

$0.240

$0.220

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Corohmni

South Africa . 105 parts In-Stock

1+ parts

$0.258

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105

$0.258

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Argo Parts USA

USA . 4,217 parts In-Stock

1+ parts

$0.306

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-

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$0.297

4,217

$0.306

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-

$0.297

Continental Prestige Electronics

USA . 8,371 parts In-Stock

1+ parts

$0.515

100+ parts

$0.494

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8,371

$0.515

$0.494

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AZTECH Wire

Italy . 341 parts In-Stock

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$17.660

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341

$17.660

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Kepictronics

USA . 15,000 parts In-Stock

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Perfect Parts

USA . 13,214 parts In-Stock

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Lixinc

USA . 8,587 parts In-Stock

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8,587

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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7,000

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Kulean Microsystems

USA . 6,689 parts In-Stock

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6,689

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TANS Electronics

Latvia . 6,463 parts In-Stock

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6,463

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Problanco Electronics

Mexico . 4,620 parts In-Stock

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4,620

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SupplyDigital Components

Austria . 2,124 parts In-Stock

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2,124

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UHIMA Technologies

Türkiye . 522 parts In-Stock

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522

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Overview

Experience the power and reliability of the MJE800G by Onsemi, a high-quality Power BJT perfect for amplifier applications. With a built-in diode and resistor, this NPN Darlington transistor offers exceptional performance and durability. Onsemi's reputation for excellence ensures that you are getting a product that is not only dependable but also provides value and benefits to your projects. Trust in the MJE800G to deliver optimal results, making it the ideal choice for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package durable and resistant to environmental factors, ensuring the transistor's longevity and reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and switching circuits, making this product suitable for a variety of applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration provides high current gain, while the built-in diode and resistor add convenience and functionality to the transistor circuit.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor is optimized for amplifying signals with high fidelity and efficiency.

Maximum Power Dissipation (Abs): 40 W

With a high maximum power dissipation, this transistor can handle large amounts of power without risk of overheating or damage.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and placement in a circuit, simplifying the installation process.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection to the circuit board, minimizing the risk of loose connections or electrical faults.

No. of Terminals: 3

Having 3 terminals (base, collector, emitter) allows for precise control and modulation of the transistor's characteristics in a circuit.

Maximum Collector-Emitter Voltage: 60 V

The high maximum collector-emitter voltage rating ensures that the transistor can handle higher voltages without breakdown, improving overall circuit stability.

Terminal Finish: MATTE TIN

The matte tin finish on the terminals provides good solderability and corrosion resistance, enhancing the reliability and longevity of the transistor.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE800G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-225

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE800G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-020-5054, 5961010205054

NIIN

010205054

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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