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MJE800T

Onsemi

MJE800T by Onsemi

MJE800T by Onsemi is a NPN BJT with 50W power dissipation, 750 min hFE, and 60V max collector-emitter voltage. Ideal for amplifier applications, it features a built-in diode and resistor in a rectangular package with through-hole terminals. Operating at up to 150 °C, it has a max collector current of 4A and transition frequency of 1MHz.

Median Price

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Lifecycle Status

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Digiode

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Electronic Expediters

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Vyrian

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Resion

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Mil-Aero Solutions, Inc.

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Corel Iberica Componentes, S.L.

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Prism Electronics

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LittleDiode

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MRC Electronics

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TANS Electronics

Latvia . 7,735 parts In-Stock

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Problanco Electronics

Mexico . 4,425 parts In-Stock

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Kulean Microsystems

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Corphita

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SupplyDigital Components

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Overview

When it comes to power bipolar junction transistors, the MJE800T by Onsemi stands out for its exceptional quality and reliability. Manufactured by a trusted brand in the industry, this NPN transistor with Darlington configuration is perfect for amplifier applications. With a maximum power dissipation of 50W and a minimum DC current gain of 750, this transistor offers high performance and efficiency. The MJE800T's flange mount package style and single terminal position make it easy to use, while its robust design ensures long-lasting functionality. Upgrade your electronic projects with the MJE800T and experience the difference in quality and performance that Onsemi products provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

Common NPN configuration allows for easy integration into circuits.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Convenient configuration with built-in components saves space and simplifies circuit design.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification tasks.

Package Shape: RECTANGULAR

Rectangular package shape offers easy mounting and integration into circuit layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections in circuit boards.

Maximum Power Dissipation (Abs): 50 W

High power dissipation capability allows for use in applications that require a high amount of power handling.

Minimum DC Current Gain (hFE): 750

High DC current gain ensures efficient amplification and performance.

Maximum Operating Temperature: 150 °C

Wide operating temperature range makes the transistor suitable for various environmental conditions.

Maximum Collector-Emitter Voltage: 60 V

High maximum voltage rating ensures reliable operation in high voltage circuits.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability for the transistor.

Maximum Collector Current (IC): 4 A

High maximum collector current rating allows for handling higher currents in circuits.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and conductivity for reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies circuit layout and connections.

Case Connection: COLLECTOR

Collector case connection allows for efficient heat dissipation and thermal management.

Nominal Transition Frequency (fT): 1 MHz

High transition frequency enables fast switching and amplification performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE800T attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE800T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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