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MJE801

Onsemi

MJE801 by Onsemi

MJE801 by Onsemi is a NPN Power BJT with 2.8V VCEsat, 40W Pdiss, and 750 hFE. Ideal for applications requiring high current amplification in power circuits. Features a built-in diode and resistor in a rectangular package with through-hole terminals.

Median Price

$7.500

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 3 parts In-Stock

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$7.500

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3

$7.500

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Digiode

USA . 7,327 parts In-Stock

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7,327

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Vyrian

USA . 6,423 parts In-Stock

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6,423

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Anansix

USA . 3,209 parts In-Stock

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3,209

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PC Components Company LLC

USA . 135 parts In-Stock

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135

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Bristol Electronics

USA . 115 parts In-Stock

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115

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R&J Components

USA . 50 parts In-Stock

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50

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Tech-Mark Corp

USA . 24 parts In-Stock

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24

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Prism Electronics

USA . 23 parts In-Stock

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Manoshevitz Elec. Sales

Israel . 18 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 6 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,218 parts In-Stock

1+ parts

$0.696

100+ parts

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1k+ parts

$0.626

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1,218

$0.696

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$0.626

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MKK Technologies

India . 1,403 parts In-Stock

1+ parts

$1.308

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1,403

$1.308

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DigiPath Technology Company

USA . 1,403 parts In-Stock

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$1.308

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1,403

$1.308

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Corohmni

South Africa . 227 parts In-Stock

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$7.500

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227

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Corphita

USA . 7,550 parts In-Stock

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7,550

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SupplyDigital Components

Austria . 6,755 parts In-Stock

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6,755

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Kulean Microsystems

USA . 6,570 parts In-Stock

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6,570

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Problanco Electronics

Mexico . 4,694 parts In-Stock

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Supply Digital

USA . 2,817 parts In-Stock

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TANS Electronics

Latvia . 2,375 parts In-Stock

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2,375

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UHIMA Technologies

Türkiye . 932 parts In-Stock

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932

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Parana Technologies

USA . 430 parts In-Stock

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$0.832

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430

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$0.832

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Perfect Parts

USA . 48 parts In-Stock

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48

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Assy Fe

Spain . 30 parts In-Stock

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30

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A-Plus Industry Inc.

USA . 12 parts In-Stock

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12

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Overview

Unleash the power of innovation with the MJE801 by Onsemi, a high-quality Power BJT that delivers exceptional performance and reliability. Designed with a built-in diode and resistor, this NPN Darlington transistor offers seamless integration and unmatched efficiency in a variety of applications. Whether you're looking to enhance your power supply, motor control, or audio amplifier projects, the MJE801 is the perfect choice for achieving optimal results. Experience the superior craftsmanship of Onsemi and unlock a world of possibilities with the MJE801.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor versatile for different applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

This configuration simplifies circuit design by integrating additional components, saving time and effort in implementation.

Maximum VCEsat: 2.8 V

Low VCEsat reduces power losses and improves efficiency in the circuit.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into electronic systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure connection to the circuit board, ensuring reliable performance.

Maximum Power Dissipation (Abs): 40 W

High power dissipation capability allows the transistor to handle large amounts of power without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers mechanical stability and ease of installation in industrial applications.

Minimum DC Current Gain (hFE): 750

High DC current gain ensures proper amplification in the circuit, leading to accurate signal processing.

Maximum Operating Temperature: 150 °C

Wide operating temperature range enables the transistor to function reliably in various temperature conditions.

Maximum Collector-Emitter Voltage: 60 V

High collector-emitter voltage rating provides flexibility in circuit design and protects the transistor from voltage spikes.

Transistor Element Material: SILICON

Silicon material offers excellent performance and reliability in electronic devices.

Maximum Collector Current (IC): 4 A

High collector current rating allows the transistor to handle large current loads without damage.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection to the circuit, reducing complexity in circuit design.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE801 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Element Material:

SILICON

Maximum VCEsat:

2.8 V

Trade Compliance

MJE801 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-020-5055, 5961010205055

NIIN

010205055

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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