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MJE8503A

Onsemi

MJE8503A by Onsemi

MJE8503A by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 700V and max. collector current of 5A. It has a min. DC current gain of 2.25 and operates up to 125 °C, suitable for switching applications in various industries due to its high power handling capabilities and single configuration design.

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1k+

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Vyrian

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Digiode

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Kulean Microsystems

USA . 3,904 parts In-Stock

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Problanco Electronics

Mexico . 3,343 parts In-Stock

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SupplyDigital Components

Austria . 2,619 parts In-Stock

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TANS Electronics

Latvia . 1,199 parts In-Stock

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UHIMA Technologies

Türkiye . 636 parts In-Stock

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Corohmni

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Corphita

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Overview

Looking for a reliable solution for your power switching needs? Look no further than the Onsemi MJE8503A Power Bipolar Junction Transistor. With a trusted manufacturer like Onsemi, you can rest assured of top-notch quality and performance. This NPN transistor is perfect for various applications, offering a maximum collector-emitter voltage of 700V and a maximum collector current of 5A. Experience the value and benefits of this transistor with its high DC current gain and nominal transition frequency. Upgrade your electronics with the MJE8503A today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic epoxy packaging provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN polarity allows for easy integration and compatibility with other NPN components in circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity in electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in switching circuits.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and integration into electronic systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during circuit assembly.

No. of Terminals: 3

Three terminals provide necessary connections for the transistor to function in a circuit.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers mechanical stability and ease of mounting on PCBs or heat sinks.

Minimum DC Current Gain (hFE): 2.25

Minimum DC current gain ensures consistent and reliable amplification of current in the circuit.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows for use in a wide range of environmental conditions without compromising performance.

Maximum Collector-Emitter Voltage: 700 V

High maximum collector-emitter voltage rating allows for handling high voltage applications with safety and reliability.

Transistor Element Material: SILICON

Silicon material in the transistor element provides efficient and reliable performance in electronic circuits.

Maximum Collector Current (IC): 5 A

High maximum collector current rating enables the transistor to handle large current loads in switching applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good solderability and reliable electrical connections for the transistor.

Terminal Position: SINGLE

Single terminal position simplifies circuit layout and connection of the transistor in electronic systems.

Case Connection: COLLECTOR

Collector case connection provides efficient heat dissipation and electrical connection for the transistor in the circuit.

Nominal Transition Frequency (fT): 7 MHz

High nominal transition frequency enables fast switching speeds and high-frequency operation in electronic circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE8503A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

700 V

Configuration:

Minimum DC Current Gain (hFE):

2.25

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE8503A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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