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MJE8503AAK

Onsemi

MJE8503AAK by Onsemi

MJE8503AAK by Onsemi is a NPN Power BJT with max. Vce of 700V, Ic of 5A, and hFE of 2.25. Ideal for switching applications, it operates up to 125 °C with fT of 7MHz. The transistor comes in a plastic/epoxy package style with through-hole terminals for easy mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,160 parts In-Stock

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2,160

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Digiode

USA . 2,068 parts In-Stock

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2,068

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Distributors (Availability)

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Kulean Microsystems

USA . 7,106 parts In-Stock

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7,106

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TANS Electronics

Latvia . 6,128 parts In-Stock

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6,128

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SupplyDigital Components

Austria . 5,852 parts In-Stock

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5,852

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Problanco Electronics

Mexico . 2,500 parts In-Stock

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2,500

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UHIMA Technologies

Türkiye . 912 parts In-Stock

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912

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Corohmni

South Africa . 324 parts In-Stock

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324

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Corphita

USA . 224 parts In-Stock

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Overview

Empower your electronic projects with the MJE8503AAK power bipolar junction transistor from Onsemi. Known for their high-quality components, Onsemi delivers reliable and efficient solutions for a wide range of applications. Whether you're looking to enhance the performance of your switching systems or optimize power management, this NPN transistor offers unmatched value and benefits. With a maximum collector-emitter voltage of 700V and a collector current of 5A, the MJE8503AAK is the perfect choice for your next project. Upgrade your designs today with Onsemi's trusted technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan and reliable performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile for various applications.

Configuration: SINGLE

Simplifies the circuit design by having only one transistor in a single package, making it easier to integrate into projects.

Transistor Application: SWITCHING

Designed for switching applications, allowing for efficient control of current flow in electronic circuits.

Package Shape: RECTANGULAR

The rectangular shape of the package enables easier mounting onto circuit boards and provides stability during operation.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer reliable connections to the circuit board, preventing disconnections during use.

Maximum Collector-Emitter Voltage: 700 V

A high maximum voltage rating allows for usage in high-power applications without risk of damage.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE8503AAK attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

700 V

Configuration:

Minimum DC Current Gain (hFE):

2.25

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE8503AAK Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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