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MJE800STU

Onsemi

MJE800STU by Onsemi

MJE800STU by Onsemi is a NPN power BJT with 40W max power dissipation, 750 min hFE, and 60V max VCE. Ideal for applications requiring high current amplification in a compact package, such as motor control circuits or power supply units.

Median Price

$2.710

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Flip Electronics (Authorized)

USA . 2,979 parts In-Stock

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DigiKey

USA . 2,477 parts In-Stock

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$2.710

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$2.710

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Vyrian

USA . 2,974 parts In-Stock

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$2.780

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Flip Electronics

USA . 2,477 parts In-Stock

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Digiode

USA . 580 parts In-Stock

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580

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Inventory MP

USA . 130 parts In-Stock

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130

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Bristol Electronics

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Distributors (Availability)

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Ampacity Inc.

Singapore . 2,726 parts In-Stock

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$2.500

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$2.500

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Corohmni

South Africa . 344 parts In-Stock

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$2.940

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Metaverse IC Inc.

Canada . 36,530 parts In-Stock

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TANS Electronics

Latvia . 5,723 parts In-Stock

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Microchip USA

USA . 4,891 parts In-Stock

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Perfect Parts

USA . 4,328 parts In-Stock

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Kulean Microsystems

USA . 3,482 parts In-Stock

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SupplyDigital Components

Austria . 2,931 parts In-Stock

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Corphita

USA . 2,376 parts In-Stock

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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Supply Digital

USA . 1,079 parts In-Stock

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Problanco Electronics

Mexico . 712 parts In-Stock

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UHIMA Technologies

Türkiye . 72 parts In-Stock

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Overview

Upgrade your power systems with the MJE800STU by Onsemi - a high-quality Power BJT transistor that offers outstanding performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this NPN Darlington transistor with built-in diode and resistor is perfect for a wide range of applications. From power supplies to motor control, this product delivers superior efficiency and precision. Experience the value and benefits of choosing Onsemi's MJE800STU - unmatched quality, optimal functionality, and lasting durability. Elevate your projects with this top-of-the-line transistor today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides high level of durability and resistance to moisture, making the transistor suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering high efficiency and reliability.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Darlington configuration offers high current gain and the built-in diode and resistor simplifies circuit design, saving time and cost.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into various electronic systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during assembly.

Maximum Power Dissipation (Abs): 40 W

High power dissipation capability allows the transistor to handle demanding applications without overheating.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, the transistor can operate reliably in elevated temperature environments.

Maximum Collector-Emitter Voltage: 60 V

Suitable for applications requiring higher voltage ratings, ensuring safe and efficient operation.

Transistor Element Material: SILICON

Silicon transistors offer excellent performance and reliability for a wide range of electronic devices and circuits.

Maximum Collector Current (IC): 4 A

High collector current rating allows the transistor to handle higher current loads, making it versatile for various applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring long-term reliability in different environments.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection in circuits, optimizing space and layout.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE800STU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Element Material:

SILICON

Trade Compliance

MJE800STU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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