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MJE800

Onsemi

MJE800 by Onsemi

MJE800 by Onsemi is a NPN power BJT with 2.5V VCEsat and 40W Pd, ideal for high-power applications. Featuring a Darlington configuration, it offers hFE of 750 and can handle up to 4A IC. With a max VCE of 60V and operating temp of 150 °C, it's suitable for various industrial uses.

Median Price

$0.330

Lifecycle Status

Suppliers In-Stock

35

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 29 parts In-Stock

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$0.330

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$0.310

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$0.280

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$0.330

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Digiode

USA . 7,020 parts In-Stock

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$0.314

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$0.314

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Component Electronics Inc.

Canada . 23 parts In-Stock

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$1.150

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$0.870

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$0.750

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Ace Electronics

USA . 48 parts In-Stock

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$5.000

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American Microsemiconductor Inc.

USA . 12,030 parts In-Stock

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Forefront Electronics and Design

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Vyrian

USA . 5,477 parts In-Stock

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Anansix

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Lakeview Electronics

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Component Sense

UK . 398 parts In-Stock

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A2Z Electronics, Inc.

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Electronic Expediters

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Lakeland Logistics Inc

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Huijzer Components

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Bristol Electronics

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Semtec, LLC

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ECAB

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First Choice Components Inc.

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Prism Electronics

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Fibra_Brandt Electronic GMBH

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PC Components Company LLC

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LWI Electronics Inc

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Microfarads

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Resion

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LittleDiode

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Italy . 22 parts In-Stock

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M&R Communications

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Mil-Aero Solutions, Inc.

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ACDS - Activité Composants Distribution Service

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Elcom Components

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MISTER SPROCKETS

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Corohmni

South Africa . 236 parts In-Stock

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$0.263

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Corphita

USA . 5,778 parts In-Stock

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$0.297

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Benley Electronics

USA . 45 parts In-Stock

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$0.500

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IDEA Electronic Components Group

UK . 801 parts In-Stock

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$1.608

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$1.447

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801

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MKK Technologies

India . 1,503 parts In-Stock

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$3.024

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DigiPath Technology Company

USA . 1,503 parts In-Stock

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$3.024

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QUARKTWIN TECHNOLOGY LTD

USA . 18,377 parts In-Stock

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Kepictronics

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TANS Electronics

Latvia . 6,499 parts In-Stock

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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SupplyDigital Components

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Problanco Electronics

Mexico . 3,289 parts In-Stock

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Kulean Microsystems

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Supply Digital

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UHIMA Technologies

Türkiye . 470 parts In-Stock

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Parana Technologies

USA . 384 parts In-Stock

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Assy Fe

Spain . 242 parts In-Stock

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Metaverse IC Inc.

Canada . 232 parts In-Stock

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

UK . 6 parts In-Stock

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A-Plus Industry Inc.

USA . 5 parts In-Stock

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Overview

Upgrade your power electronics with the MJE800 by Onsemi, a top-quality Power Bipolar Junction Transistor that offers superior performance and reliability. Manufactured by Onsemi, a trusted industry leader, this NPN transistor features a Darlington configuration with a built-in diode and resistor for added convenience. With a high DC current gain of 750 and a maximum operating temperature of 150 °C, the MJE800 is perfect for a wide range of applications, from industrial to automotive. Experience the value and benefits of this product today and take your projects to new heights!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and mechanical strength, increasing durability and reliability of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier and switching circuits, making this transistor versatile in various applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain and built-in diode and resistor provide protection and simplifies circuit design.

Maximum VCEsat: 2.5 V

Low VCEsat minimizes power losses and improves efficiency of the transistor in operation.

Package Shape: RECTANGULAR

Rectangular package shape allows for efficient PCB layout and space-saving design.

Terminal Form: THROUGH-HOLE

Through-hole terminals are easier to solder and provide secure connections, enhancing the reliability of the transistor in a circuit.

No. of Terminals: 3

Simple 3-terminal design makes it easy to integrate into circuits and reduces complexity of wiring.

Maximum Power Dissipation (Abs): 40 W

High power dissipation capability allows the transistor to handle high power applications without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides mechanical stability and ease of mounting in various applications.

Minimum DC Current Gain (hFE): 750

High DC current gain ensures proper amplification of signals and consistent performance of the transistor.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows the transistor to function reliably in different environmental conditions.

Maximum Collector-Emitter Voltage: 60 V

High collector-emitter voltage rating provides protection against voltage spikes and overloads in the circuit.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance, better temperature tolerance, and reliability compared to other materials.

Maximum Collector Current (IC): 4 A

High collector current rating allows the transistor to handle large currents, suitable for power applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish provides good solderability and ensures strong electrical connections.

Terminal Position: SINGLE

Single terminal position simplifies circuit integration and PCB layout, making installation easy.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time at peak temperature ensures proper soldering and prevents damage to the transistor during assembly.

Peak Reflow Temperature °C: 235

High peak reflow temperature allows for reliable and durable solder joints, even in harsh manufacturing processes.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE800 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Maximum VCEsat:

2.5 V

Trade Compliance

MJE800 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-01-023-7424, 5961010237424, 5961-01-020-5054, 5961010205054

NIIN

010237424, 010205054

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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