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MJE180G

Onsemi

MJE180G by Onsemi

MJE180G by Onsemi is a NPN BJT transistor with 3 terminals, capable of handling up to 1.5W power dissipation and 3A collector current. With a min hFE of 12, it's ideal for switching applications at temperatures up to 150°C. The package style is flange mount with matte tin finish, suitable for through-hole mounting in various electronic circuits.

Median Price

$1.270

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 1,400 parts In-Stock

1+ parts

$1.138

100+ parts

$0.579

1k+ parts

$0.376

10k+ parts

-

1,400

$1.138

$0.579

$0.376

-

Farnell

UK . 2,244 parts In-Stock

1+ parts

$1.270

100+ parts

$0.455

1k+ parts

$0.357

10k+ parts

$0.349

2,244

$1.270

$0.455

$0.357

$0.349

Arrow

USA . 1,480 parts In-Stock

1+ parts

$1.447

100+ parts

$0.532

1k+ parts

$0.423

10k+ parts

$0.381

1,480

$1.447

$0.532

$0.423

$0.381

DigiKey

USA . 569 parts In-Stock

1+ parts

$1.570

100+ parts

$0.661

1k+ parts

$0.474

10k+ parts

$0.375

569

$1.570

$0.661

$0.474

$0.375

Mouser Electronics

USA . 520 parts In-Stock

1+ parts

$1.570

100+ parts

$0.527

1k+ parts

-

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520

$1.570

$0.527

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Newark

USA . 2,739 parts In-Stock

1+ parts

$1.660

100+ parts

$0.683

1k+ parts

$0.586

10k+ parts

-

2,739

$1.660

$0.683

$0.586

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Element14

Singapore . 2,244 parts In-Stock

1+ parts

$2.180

100+ parts

$0.776

1k+ parts

$0.609

10k+ parts

$0.597

2,244

$2.180

$0.776

$0.609

$0.597

Rochester

USA . 59,761 parts In-Stock

1+ parts

-

100+ parts

$0.509

1k+ parts

$0.423

10k+ parts

$0.377

59,761

-

$0.509

$0.423

$0.377

Verical

USA . 1,480 parts In-Stock

1+ parts

-

100+ parts

$0.532

1k+ parts

$0.423

10k+ parts

$0.381

1,480

-

$0.532

$0.423

$0.381

Master Electronics

USA . 945 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.339

10k+ parts

$0.324

945

-

-

$0.339

$0.324

Future Electronics

Canada . 465 parts In-Stock

1+ parts

-

100+ parts

$0.555

1k+ parts

$0.520

10k+ parts

$0.500

465

-

$0.555

$0.520

$0.500

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 407 parts In-Stock

1+ parts

$0.396

100+ parts

-

1k+ parts

-

10k+ parts

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407

$0.396

-

-

-

Nova Conductors

Japan . 98 parts In-Stock

1+ parts

$0.449

100+ parts

-

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-

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98

$0.449

-

-

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Flip Electronics

USA . 12,000 parts In-Stock

1+ parts

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12,000

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Vyrian

USA . 7,900 parts In-Stock

1+ parts

-

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7,900

-

-

-

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IBS Electronics

USA . 1,410 parts In-Stock

1+ parts

-

100+ parts

$0.778

1k+ parts

$0.729

10k+ parts

$0.540

1,410

-

$0.778

$0.729

$0.540

Cyclops Electronics Ltd

UK . 454 parts In-Stock

1+ parts

-

100+ parts

-

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454

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-

-

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LittleDiode

UK . 27 parts In-Stock

1+ parts

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27

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 8,875 parts In-Stock

1+ parts

$0.354

100+ parts

-

1k+ parts

-

10k+ parts

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8,875

$0.354

-

-

-

Corphita

USA . 1,864 parts In-Stock

1+ parts

$0.375

100+ parts

-

1k+ parts

-

10k+ parts

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1,864

$0.375

-

-

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Corohmni

South Africa . 267 parts In-Stock

1+ parts

$0.417

100+ parts

-

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-

10k+ parts

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267

$0.417

-

-

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Aztec Data Supply Inc.

USA . 3,687 parts In-Stock

1+ parts

$0.437

100+ parts

-

1k+ parts

-

10k+ parts

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3,687

$0.437

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Aranea Global

USA . 50 parts In-Stock

1+ parts

$0.440

100+ parts

-

1k+ parts

$0.423

10k+ parts

-

50

$0.440

-

$0.423

-

Continental Prestige Electronics

USA . 3,176 parts In-Stock

1+ parts

$0.674

100+ parts

$0.437

1k+ parts

$0.275

10k+ parts

$0.259

3,176

$0.674

$0.437

$0.275

$0.259

Metaverse IC Inc.

Canada . 88,168 parts In-Stock

1+ parts

-

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88,168

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Lixinc

USA . 12,454 parts In-Stock

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12,454

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GreenTree Electronics

Israel . 10,000 parts In-Stock

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Kepictronics

USA . 7,199 parts In-Stock

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7,199

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Problanco Electronics

Mexico . 5,580 parts In-Stock

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5,580

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TANS Electronics

Latvia . 5,208 parts In-Stock

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5,208

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SupplyDigital Components

Austria . 3,274 parts In-Stock

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3,274

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Argo Parts USA

USA . 2,808 parts In-Stock

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2,808

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Kulean Microsystems

USA . 2,573 parts In-Stock

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2,573

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Perfect Parts

USA . 2,076 parts In-Stock

1+ parts

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2,076

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UHIMA Technologies

Türkiye . 418 parts In-Stock

1+ parts

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418

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Overview

Unlock the power of reliable performance with the MJE180G from Onsemi, a high-quality Power Bipolar Junction Transistor designed for switching applications. Manufactured by Onsemi, a trusted industry leader, this NPN transistor offers exceptional value and benefits to customers. With a maximum collector-emitter voltage of 40V and a maximum collector current of 3A, this transistor ensures efficient operation and optimal performance. Whether you're looking to enhance your electronic projects or improve your switching applications, the MJE180G delivers unmatched quality and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the transistor more durable and resistant to external factors, increasing its lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor versatile in its use.

Configuration: SINGLE

Single configuration makes the transistor easy to use and integrate into circuits.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can handle high-speed switching operations efficiently.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and mounting in electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides secure connections and stability in circuit boards.

Maximum Power Dissipation (Abs): 1.5 W

With a high power dissipation rating, this transistor can handle heat dissipation effectively during operation.

Package Style (Meter): FLANGE MOUNT

Flange mount package style facilitates easy mounting and installation in electronic devices.

Minimum DC Current Gain (hFE): 12

A minimum DC current gain of 12 ensures reliable and consistent performance in various circuit configurations.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 40 V

High collector-emitter voltage rating of 40V allows for safe operation in circuits.

Transistor Element Material: SILICON

Silicon material in the transistor element provides excellent performance characteristics and reliability.

Maximum Collector Current (IC): 3 A

With a high collector current rating, this transistor can handle high current loads without issues.

Terminal Finish: MATTE TIN

Matte tin terminal finish ensures good solderability and a reliable electrical connection.

Terminal Position: SINGLE

Single terminal position simplifies the connection process in circuit designs.

Nominal Transition Frequency (fT): 50 MHz

High nominal transition frequency allows for fast signal switching and amplification capabilities.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE180G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

12

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE180G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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