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BDW42G

Onsemi

BDW42G by Onsemi

The Onsemi BDW42G is a NPN power BJT with Darlington configuration, ideal for switching applications. It features a max VCEsat of 3V, hFE of 250, and IC of 15A. With a package style of flange mount and operating temperature range from -55 to 150 °C, it offers high performance in various electronic designs.

Median Price

$0.568

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 99 parts In-Stock

1+ parts

$0.568

100+ parts

$0.533

1k+ parts

$0.482

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99

$0.568

$0.533

$0.482

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Distributors (In-Stock)

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Digiode

USA . 1,477 parts In-Stock

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$0.540

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1,477

$0.540

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Vyrian

USA . 2,200 parts In-Stock

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2,200

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North Shore Components

USA . 422 parts In-Stock

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422

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ComSIT Distribution GmbH

Germany . 100 parts In-Stock

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100

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Fibra_Brandt Electronic GMBH

Germany . 48 parts In-Stock

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48

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Flip Electronics

USA . 46 parts In-Stock

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Connector Distribution Corp

USA . 9 parts In-Stock

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9

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Right Parts Inc.

USA . 9 parts In-Stock

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LittleDiode

UK . 3 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 960 parts In-Stock

1+ parts

$0.511

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960

$0.511

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Corohmni

South Africa . 447 parts In-Stock

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$0.568

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447

$0.568

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Native Components

USA . 929 parts In-Stock

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$1.270

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929

$1.270

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Northwest PG Solutions

USA . 1,055 parts In-Stock

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$1.397

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$1.397

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AZTECH Wire

Italy . 682 parts In-Stock

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$13.100

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Perfect Parts

USA . 21,731 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,472 parts In-Stock

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Kulean Microsystems

USA . 6,769 parts In-Stock

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Problanco Electronics

Mexico . 6,125 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,981 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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TANS Electronics

Latvia . 2,739 parts In-Stock

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SupplyDigital Components

Austria . 2,635 parts In-Stock

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2,635

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UHIMA Technologies

Türkiye . 923 parts In-Stock

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923

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Overview

Discover the power of the BDW42G by Onsemi, a high-quality Power BJT transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this NPN Darlington transistor with built-in diode and resistor is perfect for switching applications. With a maximum VCEsat of 3V and a maximum collector current of 15A, this product ensures efficient power management. Whether you're looking to enhance your electronic projects or improve industrial applications, the BDW42G provides the value, benefits, and advantages that customers need for success. Elevate your designs with Onsemi's BDW42G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and durability, making the transistor suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain, while the built-in diode and resistor simplify circuit design and save space.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor is efficient and reliable when used in such scenarios.

Maximum VCEsat: 3 V

Low VCEsat means minimal voltage drop when the transistor is conducting, leading to higher efficiency in power consumption.

Maximum Power Dissipation (Abs): 85 W

With a high power dissipation capability, this transistor can handle large loads without overheating.

Minimum DC Current Gain (hFE): 250

A high minimum DC current gain ensures stable and consistent performance in various operating conditions.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to be used in demanding environments without risk of overheating.

Maximum Collector-Emitter Voltage: 100 V

This voltage rating makes the transistor suitable for applications requiring higher voltages, providing flexibility in circuit design.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDW42G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

200 pF

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

250

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

3 V

Trade Compliance

BDW42G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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