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BDW42BS

Onsemi

BDW42BS by Onsemi

The Onsemi BDW42BS is a NPN power BJT with Darlington configuration, ideal for switching applications. It features a max VCEsat of 3V, hFE of 1000, and can handle up to 15A collector current. With a package style of flange mount and operating temperature range from -55 to 150 °C, it's suitable for high-power electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,426 parts In-Stock

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Digiode

USA . 2,223 parts In-Stock

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Native Components

USA . 167 parts In-Stock

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$1.146

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167

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Northwest PG Solutions

USA . 1,094 parts In-Stock

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$1.261

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Problanco Electronics

Mexico . 8,400 parts In-Stock

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TANS Electronics

Latvia . 4,666 parts In-Stock

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Kulean Microsystems

USA . 3,530 parts In-Stock

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SupplyDigital Components

Austria . 2,090 parts In-Stock

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Corphita

USA . 1,932 parts In-Stock

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UHIMA Technologies

Türkiye . 952 parts In-Stock

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Corohmni

South Africa . 452 parts In-Stock

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Overview

Unleash the power of innovation with the BDW42BS by Onsemi, a top-quality Power BJT that delivers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this transistor is perfect for switching applications. With a maximum VCEsat of 3V and a minimum DC current gain of 1000, this NPN transistor offers unmatched value and benefits to customers looking for high-power dissipation and superior thermal performance. Upgrade your electronic projects with the BDW42BS from Onsemi and experience unparalleled efficiency and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides excellent thermal conductivity and insulation, ensuring reliable performance and durability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile and widely compatible.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor simplify circuit design and reduce component count, saving time and space in applications.

Transistor Application: SWITCHING

Designed for high-speed switching operations, making it suitable for applications requiring rapid switching action.

Maximum VCEsat: 3 V

Low VCEsat helps in minimizing power losses and improving efficiency in switching circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals are easy to solder and provide reliable connectivity in various electronic circuits.

Maximum Power Dissipation (Abs): 85 W

High power dissipation capability allows for handling large amounts of power without risking damage to the transistor.

Minimum DC Current Gain (hFE): 1000

High minimum DC current gain ensures stable and consistent amplification performance in various operating conditions.

Maximum Operating Temperature: 150 °C

Wide operating temperature range enables this transistor to be used in a variety of environments and applications.

Maximum Collector-Base Capacitance: 200 pF

Low capacitance helps in reducing signal distortion and improving high-frequency performance in amplification circuits.

Maximum Collector-Emitter Voltage: 100 V

High collector-emitter voltage rating makes this transistor suitable for high-voltage applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and temperature tolerance compared to other materials.

Maximum Collector Current (IC): 15 A

High collector current rating allows this transistor to handle heavy load currents in various circuit configurations.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability, making it easy to install and replace this transistor in electronic circuits.

Nominal Transition Frequency (fT): 4 MHz

High transition frequency enables this transistor to operate effectively in high-frequency applications such as RF amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDW42BS attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

200 pF

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

1000

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

3 V

Trade Compliance

BDW42BS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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