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BDW42BD

Onsemi

BDW42BD by Onsemi

The Onsemi BDW42BD is a NPN power BJT with Darlington configuration, ideal for switching applications. It features a max VCEsat of 3V, hFE of 1000, and can handle up to 15A collector current. With a package style of flange mount and operating temperature range from -55 to 150 °C, it offers high performance in various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,028 parts In-Stock

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Digiode

USA . 1,607 parts In-Stock

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Native Components

USA . 403 parts In-Stock

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$0.077

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$0.074

403

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$0.074

Northwest PG Solutions

USA . 1,090 parts In-Stock

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$0.085

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$0.075

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$0.085

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$0.075

Kulean Microsystems

USA . 7,587 parts In-Stock

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TANS Electronics

Latvia . 6,033 parts In-Stock

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SupplyDigital Components

Austria . 3,855 parts In-Stock

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Problanco Electronics

Mexico . 3,382 parts In-Stock

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Corphita

USA . 922 parts In-Stock

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UHIMA Technologies

Türkiye . 798 parts In-Stock

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Corohmni

South Africa . 96 parts In-Stock

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Overview

Elevate your power management solutions with the BDW42BD by Onsemi. Crafted with precision and expertise, this power bipolar junction transistor offers unrivaled performance in switching applications. Its Darlington configuration with a built-in diode and resistor ensures seamless operation, while the NPN polarity guarantees optimal efficiency. With a maximum VCEsat of 3V and a maximum collector-emitter voltage of 100V, this transistor delivers reliable power dissipation up to 85W. Whether you're looking to enhance your industrial equipment or upgrade your electronic devices, the BDW42BD is the perfect choice for high-quality, high-performance power management. Trust Onsemi for cutting-edge technology that surpasses expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliability in various operating conditions.

Polarity or Channel Type: NPN

Commonly used in amplifier circuits, making this transistor versatile for different applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design by integrating additional components, saving space and reducing overall cost.

Transistor Application: SWITCHING

Designed for efficient switching operations, making it suitable for power control applications.

Maximum VCEsat: 3 V

Low saturation voltage helps minimize power loss and heat generation during operation.

Terminal Form: THROUGH-HOLE

Allows for easy mounting on PCBs and facilitates soldering for secure connections.

Maximum Power Dissipation (Abs): 85 W

High power dissipation capability enables handling of large currents and voltages, increasing the overall robustness of the transistor.

Package Style (Meter): FLANGE MOUNT

Enables secure mounting and heat dissipation, ideal for applications requiring mechanical stability.

Minimum DC Current Gain (hFE): 1000

High current gain provides amplification of the input signal, ensuring reliable performance in various conditions.

Maximum Operating Temperature: 150 °C

Wide temperature range allows for operation in extreme environments without compromising performance.

Maximum Collector-Base Capacitance: 200 pF

Low capacitance minimizes the risk of unwanted oscillations, improving the stability of the transistor in high-frequency applications.

Maximum Collector-Emitter Voltage: 100 V

High breakdown voltage ensures safe operation in circuits with varying voltage levels.

Transistor Element Material: SILICON

Silicon transistors offer high efficiency and reliability, making them a preferred choice for various electronic devices.

Minimum Operating Temperature: -55 °C

Wide temperature range allows for operation in harsh environments without compromising the transistor's performance.

Maximum Collector Current (IC): 15 A

High collector current rating allows for handling of large currents, making the transistor suitable for power applications.

Terminal Finish: TIN LEAD

Provides good solderability and corrosion resistance, ensuring reliable electrical connections in the circuit.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections, reducing the chances of wiring errors during assembly.

Case Connection: COLLECTOR

Collector connection layout simplifies circuit design and ensures proper current flow in the transistor.

Nominal Transition Frequency (fT): 4 MHz

High transition frequency allows for fast switching speeds, making the transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDW42BD attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

200 pF

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

1000

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

3 V

Trade Compliance

BDW42BD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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