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BDW42AK

Onsemi

BDW42AK by Onsemi

The Onsemi BDW42AK is a NPN Power BJT with Darlington configuration, ideal for switching applications. It features VCEsat of 3V, hFE of 1000, and IC of 15A. With a max power dissipation of 85W and operating temperature range from -55 to 150 °C, it is suitable for high-power electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,445 parts In-Stock

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Vyrian

USA . 906 parts In-Stock

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Native Components

USA . 562 parts In-Stock

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$6.179

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Kulean Microsystems

USA . 3,376 parts In-Stock

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Northwest PG Solutions

USA . 1,839 parts In-Stock

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$6.055

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Problanco Electronics

Mexico . 1,802 parts In-Stock

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TANS Electronics

Latvia . 1,081 parts In-Stock

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UHIMA Technologies

Türkiye . 563 parts In-Stock

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563

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Corphita

USA . 444 parts In-Stock

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Corohmni

South Africa . 386 parts In-Stock

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SupplyDigital Components

Austria . 37 parts In-Stock

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Overview

Upgrade your power system with the BDW42AK by Onsemi, a high-quality Power BJT that offers unmatched performance and reliability. Manufactured by Onsemi, a trusted leader in semiconductor technology, this NPN transistor is perfect for switching applications, delivering a seamless operation with its built-in diode and resistor configuration. With a maximum collector-emitter voltage of 100V and a maximum power dissipation of 85W, the BDW42AK ensures optimal efficiency and durability. Trust Onsemi's expertise to enhance your power system with this top-of-the-line transistor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal and electrical insulation, making the transistor durable and reliable.

Polarity or Channel Type: NPN

Commonly used type of transistor for general purpose applications, offering versatility and flexibility.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design and offers protection against reverse voltage and current spikes.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient power control.

Maximum VCEsat: 3 V

Low saturation voltage helps minimize power loss and improve overall efficiency.

Package Shape: RECTANGULAR

Compact shape for easy integration into various electronic devices and circuits.

Terminal Form: THROUGH-HOLE

Allows for easy soldering onto circuit boards for secure connections.

Maximum Power Dissipation (Abs): 85 W

High power dissipation capability enables handling of large current and voltage loads.

Package Style (Meter): FLANGE MOUNT

Provides mechanical support and easy mounting options for stable installation.

Minimum DC Current Gain (hFE): 1000

High gain value ensures amplification of weak signals and reliable performance in various applications.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in diverse environmental conditions.

Maximum Collector-Base Capacitance: 200 pF

Low capacitance helps minimize signal distortion and improve high-frequency performance.

Maximum Collector-Emitter Voltage: 100 V

Can handle high voltages safely, making it suitable for a wide range of voltage levels.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material known for its reliability and performance in electronic devices.

Minimum Operating Temperature: -55 °C

Can withstand low temperatures, allowing for operation in cold environments.

Maximum Collector Current (IC): 15 A

High current rating enables handling of large current loads without damage.

Terminal Finish: TIN LEAD

Provides good electrical contact and solderability for secure connections.

Terminal Position: SINGLE

Simplified terminal configuration for easier circuit design and connection.

Case Connection: COLLECTOR

Clear indication of terminal connection for proper circuit layout.

Nominal Transition Frequency (fT): 4 MHz

High frequency capability allows for efficient signal processing and switching speed.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDW42AK attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

200 pF

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

1000

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

3 V

Trade Compliance

BDW42AK Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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