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BDW42BA

Onsemi

BDW42BA by Onsemi

The Onsemi BDW42BA is a NPN Power BJT with Darlington configuration, ideal for switching applications. It features a max VCEsat of 3V, hFE of 1000, and IC of 15A. With a package style of FLANGE MOUNT and operating temperature range from -55 to 150 °C, it offers high power dissipation at 85W for various electronic designs.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 2,212 parts In-Stock

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Digiode

USA . 1,474 parts In-Stock

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Problanco Electronics

Mexico . 7,279 parts In-Stock

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TANS Electronics

Latvia . 7,024 parts In-Stock

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Northwest PG Solutions

USA . 1,959 parts In-Stock

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Corphita

USA . 1,930 parts In-Stock

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Kulean Microsystems

USA . 1,430 parts In-Stock

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UHIMA Technologies

Türkiye . 594 parts In-Stock

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Native Components

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SupplyDigital Components

Austria . 382 parts In-Stock

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Corohmni

South Africa . 130 parts In-Stock

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Overview

Unleash the power of innovation with the Onsemi BDW42BA Power Bipolar Junction Transistor. Manufactured by industry leader Onsemi, this NPN transistor features a Darlington configuration with a built-in diode and resistor, making it perfect for switching applications. With a high DC current gain of 1000, maximum collector-emitter voltage of 100V, and maximum operating temperature of 150 °C, this transistor offers unmatched performance and reliability. Experience the superior quality and advanced technology of Onsemi with the BDW42BA, providing value and efficiency to your projects. Elevate your designs and achieve optimal results with the Onsemi BDW42BA today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile in various applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain, while the built-in diode and resistor add convenience and functionality to the design.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor is optimized for efficient and reliable switching operations.

Maximum VCEsat: 3 V

Low VCEsat ensures minimal voltage drop across the transistor, leading to higher efficiency in switching operations.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and integration into circuit designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections in the circuit board.

Maximum Power Dissipation (Abs): 85 W

High power dissipation capability allows the transistor to handle high power loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers mechanical stability and ease of mounting in industrial applications.

Minimum DC Current Gain (hFE): 1000

High DC current gain ensures strong amplification capabilities in various circuit designs.

Maximum Operating Temperature: 150 °C

Wide operating temperature range makes the transistor suitable for operation in diverse environmental conditions.

Maximum Collector-Base Capacitance: 200 pF

Low collector-base capacitance minimizes signal distortion and improves high-frequency performance.

Maximum Collector-Emitter Voltage: 100 V

High collector-emitter voltage rating allows the transistor to handle higher voltage levels in the circuit.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance and reliability in electronic circuits.

Minimum Operating Temperature: -55 °C

Wide temperature range ensures reliable operation in extreme cold environments.

Maximum Collector Current (IC): 15 A

High collector current rating allows the transistor to handle large current loads.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and electrical conductivity.

Terminal Position: SINGLE

Single terminal position simplifies circuit board layout and soldering process.

Case Connection: COLLECTOR

Collector case connection offers convenient access for connecting external components in the circuit.

Nominal Transition Frequency (fT): 4 MHz

High transition frequency allows for fast switching speeds in the circuit design.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDW42BA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

200 pF

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

1000

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

3 V

Trade Compliance

BDW42BA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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